Photoluminescence Characteristics of Post-annealed Cu2O Thin Films.
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| Title: | Photoluminescence Characteristics of Post-annealed Cu |
|---|---|
| Authors: | Chia, Chin-Hau1 (AUTHOR) chchia@nuk.edu.tw, Su, Shih-Hao1 (AUTHOR), Hu, Yu-Min1 (AUTHOR), Chiou, Jau-Wern1 (AUTHOR), Yu, Chin-Chung1 (AUTHOR), Jian, Sheng-Rui1,2 (AUTHOR) |
| Source: | Journal of Electronic Materials. Dec2024, Vol. 53 Issue 12, p7261-7270. 10p. |
| Subjects: | Thin films, Cuprous oxide, Partial pressure, Low temperatures, Exciton theory, Magnetron sputtering |
| Abstract: | Cuprous oxide (Cu2O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO2). Reduction and oxidation of oxygen were found in thin films annealed under PO2 of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu2O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO2 of 0.3 Pa and 0.7 Pa, Cu2O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu2O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 180990513 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Photoluminescence Characteristics of Post-annealed Cu<subscript>2</subscript>O Thin Films. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Chia%2C+Chin-Hau%22">Chia, Chin-Hau</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> chchia@nuk.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Su%2C+Shih-Hao%22">Su, Shih-Hao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hu%2C+Yu-Min%22">Hu, Yu-Min</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chiou%2C+Jau-Wern%22">Chiou, Jau-Wern</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yu%2C+Chin-Chung%22">Yu, Chin-Chung</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jian%2C+Sheng-Rui%22">Jian, Sheng-Rui</searchLink><relatesTo>1,2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Dec2024, Vol. 53 Issue 12, p7261-7270. 10p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Cuprous+oxide%22">Cuprous oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Partial+pressure%22">Partial pressure</searchLink><br /><searchLink fieldCode="DE" term="%22Low+temperatures%22">Low temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Exciton+theory%22">Exciton theory</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Cuprous oxide (Cu2O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO2). Reduction and oxidation of oxygen were found in thin films annealed under PO2 of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu2O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO2 of 0.3 Pa and 0.7 Pa, Cu2O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu2O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-024-11416-y Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 7261 Subjects: – SubjectFull: Thin films Type: general – SubjectFull: Cuprous oxide Type: general – SubjectFull: Partial pressure Type: general – SubjectFull: Low temperatures Type: general – SubjectFull: Exciton theory Type: general – SubjectFull: Magnetron sputtering Type: general Titles: – TitleFull: Photoluminescence Characteristics of Post-annealed Cu2O Thin Films. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chia, Chin-Hau – PersonEntity: Name: NameFull: Su, Shih-Hao – PersonEntity: Name: NameFull: Hu, Yu-Min – PersonEntity: Name: NameFull: Chiou, Jau-Wern – PersonEntity: Name: NameFull: Yu, Chin-Chung – PersonEntity: Name: NameFull: Jian, Sheng-Rui IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 53 – Type: issue Value: 12 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |