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Epitaxial growth of Ca-doped LaRhO3 thin films by chemical solution deposition.

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Title: Epitaxial growth of Ca-doped LaRhO3 thin films by chemical solution deposition.
Authors: Zhang, Li1 (AUTHOR) lizhang@ahjzu.edu.cn, Zhou, Chen2 (AUTHOR), Wei, Renhuai2 (AUTHOR), Zhu, Xuebin2 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. Dec2024, Vol. 35 Issue 36, p1-8. 8p.
Subjects: Chemical solution deposition, Physical & theoretical chemistry, Thin films, Transition metal oxides, Lattice constants
Abstract: LaRhO3 is a typical 4d transition metal perovskite oxide with p-type semiconductor-like properties. Few reports have been carried out about the La-site doping effects on the properties and no investigations have been carried out about Ca doping effects on LaRhO3 thin films. Here, La1-xCaxRhO3 (0 ≤ x ≤ 0.2) thin films were firstly deposited by chemical solution deposition. Epitaxial La1-xCaxRhO3 thin films on single crystal SrTiO3 (001) substrates with the epitaxial relationship of LaRhO3(001)[110]||SrTiO3(001)[110] have be successfully prepared. The solid solution limitation of Ca doping on La site is less than 0.3. The Ca doping effects on LRO thin film microstructures, electrical and optical properties were carefully investigated. With Ca doping, the lattice constant, the resistivity, and the optical gap were decreased. The results will provide a simple route to prepare La1-xCaxRhO3 based thin films for potential applications as near infrared transparent conducting thin films. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: Epitaxial growth of Ca-doped LaRhO<subscript>3</subscript> thin films by chemical solution deposition.
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  Data: <searchLink fieldCode="AR" term="%22Zhang%2C+Li%22">Zhang, Li</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> lizhang@ahjzu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Zhou%2C+Chen%22">Zhou, Chen</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wei%2C+Renhuai%22">Wei, Renhuai</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhu%2C+Xuebin%22">Zhu, Xuebin</searchLink><relatesTo>2</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Dec2024, Vol. 35 Issue 36, p1-8. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Chemical+solution+deposition%22">Chemical solution deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Physical+%26+theoretical+chemistry%22">Physical & theoretical chemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+metal+oxides%22">Transition metal oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Lattice+constants%22">Lattice constants</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: LaRhO3 is a typical 4d transition metal perovskite oxide with p-type semiconductor-like properties. Few reports have been carried out about the La-site doping effects on the properties and no investigations have been carried out about Ca doping effects on LaRhO3 thin films. Here, La1-xCaxRhO3 (0 ≤ x ≤ 0.2) thin films were firstly deposited by chemical solution deposition. Epitaxial La1-xCaxRhO3 thin films on single crystal SrTiO3 (001) substrates with the epitaxial relationship of LaRhO3(001)[110]||SrTiO3(001)[110] have be successfully prepared. The solid solution limitation of Ca doping on La site is less than 0.3. The Ca doping effects on LRO thin film microstructures, electrical and optical properties were carefully investigated. With Ca doping, the lattice constant, the resistivity, and the optical gap were decreased. The results will provide a simple route to prepare La1-xCaxRhO3 based thin films for potential applications as near infrared transparent conducting thin films. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s10854-024-14040-y
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      – Code: eng
        Text: English
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        Type: general
      – SubjectFull: Physical & theoretical chemistry
        Type: general
      – SubjectFull: Thin films
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      – SubjectFull: Transition metal oxides
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      – SubjectFull: Lattice constants
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      – TitleFull: Epitaxial growth of Ca-doped LaRhO3 thin films by chemical solution deposition.
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            NameFull: Zhou, Chen
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            – D: 21
              M: 12
              Text: Dec2024
              Type: published
              Y: 2024
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              Value: 36
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