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A Ku-Band Fully Differential Low-Power High-Input P1dB Low-Noise Amplifier.

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Title: A Ku-Band Fully Differential Low-Power High-Input P1dB Low-Noise Amplifier.
Authors: Lee, Sang-Rok1,2 (AUTHOR) sangrok.lee.85@gmail.com, Kim, Joon-Hyung1 (AUTHOR), Baek, Min-Seok1 (AUTHOR), Kim, Choul-Young1 (AUTHOR) cykim@cnu.ac.kr
Source: Nanomaterials (2079-4991). Dec2024, Vol. 14 Issue 23, p1913. 8p.
Subjects: Low noise amplifiers, Power amplifiers, Transistors
Abstract: This paper introduces a Ku-band fully differential low-power high-input 1 dB compression point (P1dB) low-noise amplifier (LNA). A fully differential structure is employed to enhance the input P1dB, common-mode noise rejection, and second harmonic cancellation. The first stage adopts large transistors and is optimized for power consumption and noise figure (NF). The output stage is designed with class AB bias, resulting in improved P1dB, power consumption, and linearity. The proposed two-stage fully differential common-source (CS) LNA was implemented using 65 nm bulk complementary metal oxide semiconductor (CMOS) technology. The fabricated LNA achieved a minimum NF of 2.7 dB at 13.6 GHz. Furthermore, it achieved a maximum gain of 19.92 dB at 12.2 GHz. Additionally, the LNA has an input P1dB of −7.45 dBm and an output power 1 dB compression point (OP1dB) of 10.09 dBm, both measured at 15.6 GHz. The LNA operates with a power consumption of 11 mW at a 1 V supply, and occupies a core size of 0.75 mm × 0.35 mm. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: A Ku-Band Fully Differential Low-Power High-Input P1dB Low-Noise Amplifier.
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  Data: <searchLink fieldCode="AR" term="%22Lee%2C+Sang-Rok%22">Lee, Sang-Rok</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> sangrok.lee.85@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Kim%2C+Joon-Hyung%22">Kim, Joon-Hyung</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Baek%2C+Min-Seok%22">Baek, Min-Seok</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Choul-Young%22">Kim, Choul-Young</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> cykim@cnu.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Dec2024, Vol. 14 Issue 23, p1913. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Low+noise+amplifiers%22">Low noise amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Power+amplifiers%22">Power amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This paper introduces a Ku-band fully differential low-power high-input 1 dB compression point (P1dB) low-noise amplifier (LNA). A fully differential structure is employed to enhance the input P1dB, common-mode noise rejection, and second harmonic cancellation. The first stage adopts large transistors and is optimized for power consumption and noise figure (NF). The output stage is designed with class AB bias, resulting in improved P1dB, power consumption, and linearity. The proposed two-stage fully differential common-source (CS) LNA was implemented using 65 nm bulk complementary metal oxide semiconductor (CMOS) technology. The fabricated LNA achieved a minimum NF of 2.7 dB at 13.6 GHz. Furthermore, it achieved a maximum gain of 19.92 dB at 12.2 GHz. Additionally, the LNA has an input P1dB of −7.45 dBm and an output power 1 dB compression point (OP1dB) of 10.09 dBm, both measured at 15.6 GHz. The LNA operates with a power consumption of 11 mW at a 1 V supply, and occupies a core size of 0.75 mm × 0.35 mm. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.3390/nano14231913
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 1913
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      – SubjectFull: Low noise amplifiers
        Type: general
      – SubjectFull: Power amplifiers
        Type: general
      – SubjectFull: Transistors
        Type: general
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      – TitleFull: A Ku-Band Fully Differential Low-Power High-Input P1dB Low-Noise Amplifier.
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            NameFull: Lee, Sang-Rok
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            NameFull: Kim, Joon-Hyung
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            NameFull: Baek, Min-Seok
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            NameFull: Kim, Choul-Young
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          Dates:
            – D: 01
              M: 12
              Text: Dec2024
              Type: published
              Y: 2024
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              Value: 23
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            – TitleFull: Nanomaterials (2079-4991)
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