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Influence of electron irradiation on the band gap and microhardness of TlInS2, TlInSSe and TlIn0.99Cr0.01S2 single crystals.

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Title: Influence of electron irradiation on the band gap and microhardness of TlInS2, TlInSSe and TlIn0.99Cr0.01S2 single crystals.
Authors: Khallokov, F.К1 (AUTHOR), Imanova, G.T.2,3,4 (AUTHOR) gunel_imanova55@mail.ru, Umarov, S.Kh.1 (AUTHOR), Tashmetov, M.Yu.5 (AUTHOR), Gasanov, N.Z.6 (AUTHOR), Esanov, Z.U.5 (AUTHOR), Bekpulatov, I.R.7 (AUTHOR)
Source: Materials Research Innovations. Jan2025, Vol. 29 Issue 1, p46-50. 5p.
Subjects: Band gaps, Absorption spectra, Single crystals, Microhardness, Electrons
Abstract: This work investigated the effect of partial replacement of sulphur atoms with selenium atoms (TlInSSe) and indium atoms with chromium atoms (TlIn0.99Cr0.01S2) on the band gap and microhardness of TlInS2 single crystals irradiated with electrons with energy of 2 MeV and a fluence of up to 1.5 × 1017 el/cm2. The band gap from the measured absorption spectra was determined using the Tauc method. It has been established that this irradiation leads to a decrease in the band gap in TlInS2, TlInSSe and TlIn0.99Cr0.01S2 crystals. It has been shown that after electron irradiation the microhardness of these crystals increased due to an increase in the size of crystallites on their surface. [ABSTRACT FROM AUTHOR]
Copyright of Materials Research Innovations is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 181862168
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  Data: Influence of electron irradiation on the band gap and microhardness of TlInS<subscript>2</subscript>, TlInSSe and TlIn<subscript>0.99</subscript>Cr<subscript>0.01</subscript>S<subscript>2</subscript> single crystals.
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  Data: <searchLink fieldCode="AR" term="%22Khallokov%2C+F%2EК%22">Khallokov, F.К</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Imanova%2C+G%2ET%2E%22">Imanova, G.T.</searchLink><relatesTo>2,3,4</relatesTo> (AUTHOR)<i> gunel_imanova55@mail.ru</i><br /><searchLink fieldCode="AR" term="%22Umarov%2C+S%2EKh%2E%22">Umarov, S.Kh.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tashmetov%2C+M%2EYu%2E%22">Tashmetov, M.Yu.</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gasanov%2C+N%2EZ%2E%22">Gasanov, N.Z.</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Esanov%2C+Z%2EU%2E%22">Esanov, Z.U.</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bekpulatov%2C+I%2ER%2E%22">Bekpulatov, I.R.</searchLink><relatesTo>7</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Materials+Research+Innovations%22">Materials Research Innovations</searchLink>. Jan2025, Vol. 29 Issue 1, p46-50. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Absorption+spectra%22">Absorption spectra</searchLink><br /><searchLink fieldCode="DE" term="%22Single+crystals%22">Single crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Microhardness%22">Microhardness</searchLink><br /><searchLink fieldCode="DE" term="%22Electrons%22">Electrons</searchLink>
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  Label: Abstract
  Group: Ab
  Data: This work investigated the effect of partial replacement of sulphur atoms with selenium atoms (TlInSSe) and indium atoms with chromium atoms (TlIn0.99Cr0.01S2) on the band gap and microhardness of TlInS2 single crystals irradiated with electrons with energy of 2 MeV and a fluence of up to 1.5 × 1017 el/cm2. The band gap from the measured absorption spectra was determined using the Tauc method. It has been established that this irradiation leads to a decrease in the band gap in TlInS2, TlInSSe and TlIn0.99Cr0.01S2 crystals. It has been shown that after electron irradiation the microhardness of these crystals increased due to an increase in the size of crystallites on their surface. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Research Innovations is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1080/14328917.2024.2363583
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 46
    Subjects:
      – SubjectFull: Band gaps
        Type: general
      – SubjectFull: Absorption spectra
        Type: general
      – SubjectFull: Single crystals
        Type: general
      – SubjectFull: Microhardness
        Type: general
      – SubjectFull: Electrons
        Type: general
    Titles:
      – TitleFull: Influence of electron irradiation on the band gap and microhardness of TlInS2, TlInSSe and TlIn0.99Cr0.01S2 single crystals.
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            NameFull: Khallokov, F.К
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              M: 01
              Text: Jan2025
              Type: published
              Y: 2025
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