Physical mechanism of gettering of impurity Ni atom clusters in Si lattice.
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| Title: | Physical mechanism of gettering of impurity Ni atom clusters in Si lattice. |
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| Alternate Title: | Фізичний механізм гетерування кластерів домішкових атомів нікелю в ґратці кремнію. |
| Authors: | Ismaylov, B. K.1 i.bairam@bk.ru, Zikrillayev, N. F.2, Ismailov, K. A.1, Kenzhaev, Z. T.2 |
| Source: | Semiconductor Physics, Quantum Electronics & Optoelectronics. 2024, Vol. 27 Issue 3, p294-297. 4p. |
| Subjects: | Atomic clusters, Gettering, Heat radiation & absorption, Crystal lattices, Nickel |
| Abstract: | This article presents the gettering mechanism and the physical model of impurity Ni atom clusters in the Si crystal lattice. The study finds out that the formed Ni atom clusters lead to gettering various rapidly diffusing impurities, both present in the Si lattice and introduced, as well as oxygen atoms, by stimulating generation of recombination centers of thermal and radiation defects. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductor Physics, Quantum Electronics & Optoelectronics is the property of V. Lashkaryov Institute of Semiconductor Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 182085662 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Physical mechanism of gettering of impurity Ni atom clusters in Si lattice. – Name: TitleAlt Label: Alternate Title Group: TiAlt Data: Фізичний механізм гетерування кластерів домішкових атомів нікелю в ґратці кремнію. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ismaylov%2C+B%2E+K%2E%22">Ismaylov, B. K.</searchLink><relatesTo>1</relatesTo><i> i.bairam@bk.ru</i><br /><searchLink fieldCode="AR" term="%22Zikrillayev%2C+N%2E+F%2E%22">Zikrillayev, N. F.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Ismailov%2C+K%2E+A%2E%22">Ismailov, K. A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kenzhaev%2C+Z%2E+T%2E%22">Kenzhaev, Z. T.</searchLink><relatesTo>2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductor+Physics%2C+Quantum+Electronics+%26+Optoelectronics%22">Semiconductor Physics, Quantum Electronics & Optoelectronics</searchLink>. 2024, Vol. 27 Issue 3, p294-297. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Atomic+clusters%22">Atomic clusters</searchLink><br /><searchLink fieldCode="DE" term="%22Gettering%22">Gettering</searchLink><br /><searchLink fieldCode="DE" term="%22Heat+radiation+%26+absorption%22">Heat radiation & absorption</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+lattices%22">Crystal lattices</searchLink><br /><searchLink fieldCode="DE" term="%22Nickel%22">Nickel</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This article presents the gettering mechanism and the physical model of impurity Ni atom clusters in the Si crystal lattice. The study finds out that the formed Ni atom clusters lead to gettering various rapidly diffusing impurities, both present in the Si lattice and introduced, as well as oxygen atoms, by stimulating generation of recombination centers of thermal and radiation defects. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Semiconductor Physics, Quantum Electronics & Optoelectronics is the property of V. Lashkaryov Institute of Semiconductor Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.15407/spqeo27.03.294 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 294 Subjects: – SubjectFull: Atomic clusters Type: general – SubjectFull: Gettering Type: general – SubjectFull: Heat radiation & absorption Type: general – SubjectFull: Crystal lattices Type: general – SubjectFull: Nickel Type: general Titles: – TitleFull: Physical mechanism of gettering of impurity Ni atom clusters in Si lattice. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ismaylov, B. K. – PersonEntity: Name: NameFull: Zikrillayev, N. F. – PersonEntity: Name: NameFull: Ismailov, K. A. – PersonEntity: Name: NameFull: Kenzhaev, Z. T. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: 2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 15608034 Numbering: – Type: volume Value: 27 – Type: issue Value: 3 Titles: – TitleFull: Semiconductor Physics, Quantum Electronics & Optoelectronics Type: main |
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