The photodetector characteristics of the molybdenum oxide-based heterostructure fabricated at varying oxygen and argon gas flow rates via the reactive DC magnetron sputtering.
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| Title: | The photodetector characteristics of the molybdenum oxide-based heterostructure fabricated at varying oxygen and argon gas flow rates via the reactive DC magnetron sputtering. |
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| Authors: | Talebi, S.1 (AUTHOR) samanetalebi71@yahoo.com, Eshghi, H.1 (AUTHOR) |
| Source: | Optical & Quantum Electronics. Jan2025, Vol. 57 Issue 1, p1-14. 14p. |
| Subjects: | DC sputtering, Thin films, Gas flow, Heterojunctions, X-ray diffraction |
| Abstract: | This study investigates the structure and photodetector properties of MoO3-x/p-Si heterojunction grown by reactive DC magnetron sputtering in varying O2/Ar gas flow rates. The X-ray diffraction study revealed the presence of α-MoO3 and sub-oxide phases Mo5O14 with the predominance of α-MoO3 observed in all thin films. It was observed that the prepared samples showed high transmittance values of about 80%. The FESEM images showed that the prepared samples have flake-like structures. An increase in oxygen content resulted in a compact/dense morphology and a noticeable decrease in the size of the grains. The best performance of the photodiodes is achieved by the sample (O2/Ar = 3/12), which has better crystal quality and a low dark saturated current density (0.06 μA/cm2) compared to others. This sample shows the greatest photoresponse ratio (ILight/IDark) of 569 and 812 when exposed to UV and IR light. The MoO3/p-Si heterojunction device demonstrates rapid switching properties, with fast rise and decay times in the 7–32 ms range. [ABSTRACT FROM AUTHOR] |
| Copyright of Optical & Quantum Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 182279728 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: The photodetector characteristics of the molybdenum oxide-based heterostructure fabricated at varying oxygen and argon gas flow rates via the reactive DC magnetron sputtering. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Talebi%2C+S%2E%22">Talebi, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> samanetalebi71@yahoo.com</i><br /><searchLink fieldCode="AR" term="%22Eshghi%2C+H%2E%22">Eshghi, H.</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Optical+%26+Quantum+Electronics%22">Optical & Quantum Electronics</searchLink>. Jan2025, Vol. 57 Issue 1, p1-14. 14p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22DC+sputtering%22">DC sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Gas+flow%22">Gas flow</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+diffraction%22">X-ray diffraction</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This study investigates the structure and photodetector properties of MoO3-x/p-Si heterojunction grown by reactive DC magnetron sputtering in varying O2/Ar gas flow rates. The X-ray diffraction study revealed the presence of α-MoO3 and sub-oxide phases Mo5O14 with the predominance of α-MoO3 observed in all thin films. It was observed that the prepared samples showed high transmittance values of about 80%. The FESEM images showed that the prepared samples have flake-like structures. An increase in oxygen content resulted in a compact/dense morphology and a noticeable decrease in the size of the grains. The best performance of the photodiodes is achieved by the sample (O2/Ar = 3/12), which has better crystal quality and a low dark saturated current density (0.06 μA/cm2) compared to others. This sample shows the greatest photoresponse ratio (ILight/IDark) of 569 and 812 when exposed to UV and IR light. The MoO3/p-Si heterojunction device demonstrates rapid switching properties, with fast rise and decay times in the 7–32 ms range. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Optical & Quantum Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11082-024-07982-4 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 14 StartPage: 1 Subjects: – SubjectFull: DC sputtering Type: general – SubjectFull: Thin films Type: general – SubjectFull: Gas flow Type: general – SubjectFull: Heterojunctions Type: general – SubjectFull: X-ray diffraction Type: general Titles: – TitleFull: The photodetector characteristics of the molybdenum oxide-based heterostructure fabricated at varying oxygen and argon gas flow rates via the reactive DC magnetron sputtering. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Talebi, S. – PersonEntity: Name: NameFull: Eshghi, H. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03068919 Numbering: – Type: volume Value: 57 – Type: issue Value: 1 Titles: – TitleFull: Optical & Quantum Electronics Type: main |
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