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A new photoluminescent center in cubic boron nitride synthesized under high pressure.

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Title: A new photoluminescent center in cubic boron nitride synthesized under high pressure.
Authors: Filonenko, V.P.1 (AUTHOR) filv@hppi.troitsk.ru, Bagramov, R.H.1 (AUTHOR), Zibrov, I.P.1 (AUTHOR), Lyapin, S.G.1 (AUTHOR), Kondrin, M.V.1 (AUTHOR), Shipkov, A.N.1 (AUTHOR), Enkovich, P.V.1 (AUTHOR), Brazhkin, V.V.1 (AUTHOR)
Source: Materials Letters. Mar2025, Vol. 383, pN.PAG-N.PAG. 1p.
Subjects: Crystal defects, Point defects, Electronic structure, High temperatures, Photoluminescence
Abstract: [Display omitted] • Nano- and micron powders of cubic boron nitride (cBN) have been synthesized under high pressure and temperature. • The starting materials for the synthesis were ammonia borane and hexagonal boron nitride. • A new bright and narrow photoluminescence line was detected in cBN when 1% silicon was added to the starting material. • PDOS calculations showed that photoluminescence at 683 nm is only possible when the nitrogen atom is replaced by silicon. Nano- and micron powders of cubic boron nitride were synthesized from ammonia borane and hexagonal boron nitride under high pressure and high temperature conditions without catalysts. A bright and narrow photoluminescence line at 683 nm was detected when 1 % silicon was added to the starting material. Calculations of the electronic structure of various lattice defects showed that the substitution of a nitrogen atom by silicon gave the best agreement with the experiment. [ABSTRACT FROM AUTHOR]
Copyright of Materials Letters is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 182362357
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: A new photoluminescent center in cubic boron nitride synthesized under high pressure.
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  Data: <searchLink fieldCode="AR" term="%22Filonenko%2C+V%2EP%2E%22">Filonenko, V.P.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> filv@hppi.troitsk.ru</i><br /><searchLink fieldCode="AR" term="%22Bagramov%2C+R%2EH%2E%22">Bagramov, R.H.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zibrov%2C+I%2EP%2E%22">Zibrov, I.P.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lyapin%2C+S%2EG%2E%22">Lyapin, S.G.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kondrin%2C+M%2EV%2E%22">Kondrin, M.V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shipkov%2C+A%2EN%2E%22">Shipkov, A.N.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Enkovich%2C+P%2EV%2E%22">Enkovich, P.V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Brazhkin%2C+V%2EV%2E%22">Brazhkin, V.V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Materials+Letters%22">Materials Letters</searchLink>. Mar2025, Vol. 383, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Crystal+defects%22">Crystal defects</searchLink><br /><searchLink fieldCode="DE" term="%22Point+defects%22">Point defects</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+structure%22">Electronic structure</searchLink><br /><searchLink fieldCode="DE" term="%22High+temperatures%22">High temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink>
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  Label: Abstract
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  Data: [Display omitted] • Nano- and micron powders of cubic boron nitride (cBN) have been synthesized under high pressure and temperature. • The starting materials for the synthesis were ammonia borane and hexagonal boron nitride. • A new bright and narrow photoluminescence line was detected in cBN when 1% silicon was added to the starting material. • PDOS calculations showed that photoluminescence at 683 nm is only possible when the nitrogen atom is replaced by silicon. Nano- and micron powders of cubic boron nitride were synthesized from ammonia borane and hexagonal boron nitride under high pressure and high temperature conditions without catalysts. A bright and narrow photoluminescence line at 683 nm was detected when 1 % silicon was added to the starting material. Calculations of the electronic structure of various lattice defects showed that the substitution of a nitrogen atom by silicon gave the best agreement with the experiment. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Materials Letters is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.matlet.2025.138011
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        Text: English
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      – SubjectFull: Point defects
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      – SubjectFull: Electronic structure
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      – SubjectFull: High temperatures
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      – SubjectFull: Photoluminescence
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              Text: Mar2025
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