3D silicon detectors—status and applications
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| Title: | 3D silicon detectors—status and applications |
|---|---|
| Authors: | DaVia, C.1 cinzia.davia@brunel.ac.uk, Hasi, J.1, Kenney, C.2, Kok, A.1, Parker, S.3 |
| Source: | Nuclear Instruments & Methods in Physics Research Section A. Sep2005, Vol. 549 Issue 1-3, p122-125. 4p. |
| Subjects: | Engineering instruments, Silicon diodes, Physics instruments, Nonmetals |
| Abstract: | Abstract: 3D silicon technology is a new way to make silicon detectors using Micro-Electro-Mechanical-Systems (MEMS) processing. In this innovative design the electrodes penetrate through the silicon bulk perpendicular to the surface. Two types of device have been developed—3D and planar 3D. Both use an edge electrode that eliminates the need for guard rings and provides sensitivity to within a few microns of the edge. 3D technology and its advantages are reviewed and examples of the two types of device are shown. [Copyright &y& Elsevier] |
| Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 18240853 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: 3D silicon detectors—status and applications – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22DaVia%2C+C%2E%22">DaVia, C.</searchLink><relatesTo>1</relatesTo><i> cinzia.davia@brunel.ac.uk</i><br /><searchLink fieldCode="AR" term="%22Hasi%2C+J%2E%22">Hasi, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kenney%2C+C%2E%22">Kenney, C.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kok%2C+A%2E%22">Kok, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Parker%2C+S%2E%22">Parker, S.</searchLink><relatesTo>3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+A%22">Nuclear Instruments & Methods in Physics Research Section A</searchLink>. Sep2005, Vol. 549 Issue 1-3, p122-125. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Engineering+instruments%22">Engineering instruments</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+diodes%22">Silicon diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Physics+instruments%22">Physics instruments</searchLink><br /><searchLink fieldCode="DE" term="%22Nonmetals%22">Nonmetals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: 3D silicon technology is a new way to make silicon detectors using Micro-Electro-Mechanical-Systems (MEMS) processing. In this innovative design the electrodes penetrate through the silicon bulk perpendicular to the surface. Two types of device have been developed—3D and planar 3D. Both use an edge electrode that eliminates the need for guard rings and provides sensitivity to within a few microns of the edge. 3D technology and its advantages are reviewed and examples of the two types of device are shown. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.nima.2005.04.037 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 122 Subjects: – SubjectFull: Engineering instruments Type: general – SubjectFull: Silicon diodes Type: general – SubjectFull: Physics instruments Type: general – SubjectFull: Nonmetals Type: general Titles: – TitleFull: 3D silicon detectors—status and applications Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: DaVia, C. – PersonEntity: Name: NameFull: Hasi, J. – PersonEntity: Name: NameFull: Kenney, C. – PersonEntity: Name: NameFull: Kok, A. – PersonEntity: Name: NameFull: Parker, S. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: Sep2005 Type: published Y: 2005 Identifiers: – Type: issn-print Value: 01689002 Numbering: – Type: volume Value: 549 – Type: issue Value: 1-3 Titles: – TitleFull: Nuclear Instruments & Methods in Physics Research Section A Type: main |
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