3D silicon detectors—status and applications
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| Title: | 3D silicon detectors—status and applications |
|---|---|
| Authors: | DaVia, C.1 cinzia.davia@brunel.ac.uk, Hasi, J.1, Kenney, C.2, Kok, A.1, Parker, S.3 |
| Source: | Nuclear Instruments & Methods in Physics Research Section A. Sep2005, Vol. 549 Issue 1-3, p122-125. 4p. |
| Subjects: | Engineering instruments, Silicon diodes, Physics instruments, Nonmetals |
| Abstract: | Abstract: 3D silicon technology is a new way to make silicon detectors using Micro-Electro-Mechanical-Systems (MEMS) processing. In this innovative design the electrodes penetrate through the silicon bulk perpendicular to the surface. Two types of device have been developed—3D and planar 3D. Both use an edge electrode that eliminates the need for guard rings and provides sensitivity to within a few microns of the edge. 3D technology and its advantages are reviewed and examples of the two types of device are shown. [Copyright &y& Elsevier] |
| Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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