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Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities.

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Title: Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities.
Authors: Bercha, Artem1 (AUTHOR) artem@unipress.waw.pl, Chlipała, Mikołaj1 (AUTHOR), Hajdel, Mateusz1 (AUTHOR), Muzioł, Grzegorz1 (AUTHOR), Siekacz, Marcin1 (AUTHOR), Turski, Henryk1 (AUTHOR), Trzeciakowski, Witold1 (AUTHOR) wt@unipress.waw.pl
Source: Nanomaterials (2079-4991). Jan2025, Vol. 15 Issue 2, p112. 10p.
Subjects: PIN diodes, Stark effect, Indium gallium nitride, Diodes, Optical properties
Abstract: We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes with inverted pin layer ordering (due to the tunnel junction grown before the pin structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected carriers. Out of the four types of diodes, the highest photocurrent efficiency was obtained (at reverse voltage) for the wide-well, inverted polarity diode. This diode also showed the highest PL intensity (at positive voltages) of our four samples. Diodes with wide wells have stable emission wavelengths (almost independent of bias and excitation power). [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities.
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  Data: <searchLink fieldCode="AR" term="%22Bercha%2C+Artem%22">Bercha, Artem</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> artem@unipress.waw.pl</i><br /><searchLink fieldCode="AR" term="%22Chlipała%2C+Mikołaj%22">Chlipała, Mikołaj</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hajdel%2C+Mateusz%22">Hajdel, Mateusz</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Muzioł%2C+Grzegorz%22">Muzioł, Grzegorz</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Siekacz%2C+Marcin%22">Siekacz, Marcin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Turski%2C+Henryk%22">Turski, Henryk</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Trzeciakowski%2C+Witold%22">Trzeciakowski, Witold</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> wt@unipress.waw.pl</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Jan2025, Vol. 15 Issue 2, p112. 10p.
– Name: Subject
  Label: Subjects
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  Data: <searchLink fieldCode="DE" term="%22PIN+diodes%22">PIN diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Stark+effect%22">Stark effect</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+gallium+nitride%22">Indium gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes with inverted pin layer ordering (due to the tunnel junction grown before the pin structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected carriers. Out of the four types of diodes, the highest photocurrent efficiency was obtained (at reverse voltage) for the wide-well, inverted polarity diode. This diode also showed the highest PL intensity (at positive voltages) of our four samples. Diodes with wide wells have stable emission wavelengths (almost independent of bias and excitation power). [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.3390/nano15020112
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 112
    Subjects:
      – SubjectFull: PIN diodes
        Type: general
      – SubjectFull: Stark effect
        Type: general
      – SubjectFull: Indium gallium nitride
        Type: general
      – SubjectFull: Diodes
        Type: general
      – SubjectFull: Optical properties
        Type: general
    Titles:
      – TitleFull: Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities.
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            NameFull: Bercha, Artem
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            NameFull: Chlipała, Mikołaj
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            NameFull: Hajdel, Mateusz
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            – D: 15
              M: 01
              Text: Jan2025
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              Y: 2025
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