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Dielectric, strain engineering and microstructural studies of La modified (Bi0.5Na0.5)0.94 Ba0.06TiO3 relaxor ferroelectrics.

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Title: Dielectric, strain engineering and microstructural studies of La modified (Bi0.5Na0.5)0.94 Ba0.06TiO3 relaxor ferroelectrics.
Authors: Ibrar, Muhammad1 (AUTHOR), Ullah, Amir1 (AUTHOR) amirullah@icp.edu.pk, Ullah, Mateen1 (AUTHOR), Rehman, Muneeb ur1 (AUTHOR), Ullah, Aman2 (AUTHOR), Rahman, Atta ur3 (AUTHOR), Khan, Amir Sohail4 (AUTHOR), Ahn, Chang Won5 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. Jan2025, Vol. 36 Issue 3, p1-11. 11p.
Abstract: A series of lead-free [(Bi0.5Na0.5)0.94 Ba0.06](1-x)LaxTiO3 (abbreviated as BNBTLa) with x = 0, 0.01, 0.02, 0.03 and 0.04 piezoelectric compound were synthesized using solid solution method. The structure, electromechanical and electrical properties were studied in detail. X-ray diffraction (XRD) analysis confirmed a rhombohedral symmetry for undoped, while La-doped compositions displayed a pseudocubic phase. The field-emission scanning electron microscopy (FE-SEM) of BNBTLa compound presented a decrease in grain size from 1.01 μm (x = 0), to 0.82 μm (x = 0.04). The ferroelectric-relaxor transition temperature (TF-R) shifted down to room temperature and the diffusivity (γ) values ranged between 1 and 2. The P-E hysteresis loops profile became slimmer with the doping of La contents with reduction in remnant polarization Pr and coercive field (EC). A normalized strain of 485 pm/V was found for the sample x = 0.03. These characteristics of the BNBTLa system signified a transition from the ferroelectric to the relaxor phase. Therefore, the prepared ceramics offered extendable availability for environmental friendly capacitors, sensors and actuators. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Dielectric, strain engineering and microstructural studies of La modified (Bi<subscript>0.5</subscript>Na<subscript>0.5</subscript>)<subscript>0.94</subscript> Ba<subscript>0.06</subscript>TiO<subscript>3</subscript> relaxor ferroelectrics.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jan2025, Vol. 36 Issue 3, p1-11. 11p.
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A series of lead-free [(Bi0.5Na0.5)0.94 Ba0.06](1-x)LaxTiO3 (abbreviated as BNBTLa) with x = 0, 0.01, 0.02, 0.03 and 0.04 piezoelectric compound were synthesized using solid solution method. The structure, electromechanical and electrical properties were studied in detail. X-ray diffraction (XRD) analysis confirmed a rhombohedral symmetry for undoped, while La-doped compositions displayed a pseudocubic phase. The field-emission scanning electron microscopy (FE-SEM) of BNBTLa compound presented a decrease in grain size from 1.01 μm (x = 0), to 0.82 μm (x = 0.04). The ferroelectric-relaxor transition temperature (TF-R) shifted down to room temperature and the diffusivity (γ) values ranged between 1 and 2. The P-E hysteresis loops profile became slimmer with the doping of La contents with reduction in remnant polarization Pr and coercive field (EC). A normalized strain of 485 pm/V was found for the sample x = 0.03. These characteristics of the BNBTLa system signified a transition from the ferroelectric to the relaxor phase. Therefore, the prepared ceramics offered extendable availability for environmental friendly capacitors, sensors and actuators. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s10854-025-14317-w
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              M: 01
              Text: Jan2025
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