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Improvement of MoOx-based RRAM performance by rapid thermal annealing process and its application in artificial synapse.

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Title: Improvement of MoOx-based RRAM performance by rapid thermal annealing process and its application in artificial synapse.
Authors: Xu, Xiaolei1 (AUTHOR), Mi, Wei1 (AUTHOR), Wang, Di1 (AUTHOR), He, Lin'an1 (AUTHOR), Liu, He2 (AUTHOR), Dong, Chenming2 (AUTHOR), Li, Chunbo2 (AUTHOR), Zhou, Liwei1 (AUTHOR) lwzhou@email.tjut.edu.cn, Zhao, Jinshi1 (AUTHOR) jinshi58@163.com
Source: Journal of Materials Science. Feb2025, Vol. 60 Issue 6, p2933-2947. 15p.
Subjects: Nonvolatile random-access memory, Rapid thermal processing, Oxygen vacancy, Thin films, Computer systems
Abstract: This work presents the effect of the rapid thermal annealing (RTA) process on the performance of Ti/MoOx/Pt resistive random access memory (RRAM). Compared with the device without RTA treatment, the device processed in vacuum RTA (300 ℃,80 s) exhibits better resistance switching (RS) characteristics, including smaller forming voltage (Vf = 5.7 V) and set voltage (Vset = 1.41 V), stable high-resistance state (coefficient of variation = 5.91%) and 100 times storage window. This may be attributed to changes in oxygen vacancies (VO) content. The X-ray diffraction (XRD) analysis results indicate that the prepared MoOx thin films are all amorphous. X-ray photoelectron spectroscopic (XPS) analysis results indicate that vacuum RTA treatment increases the VO content in the MoOx dielectric layer, which may make it easier for thick conductive filaments to form. This leads to a reduction in the Vf and Vset, while also establishing a relatively fixed fracture position for conductive filaments, thereby achieving a stable high-resistance state. XPS depth profiling results of Device B before and after applying positive voltage indicate the formation of TiOx layer at the interface and the increase of VO in the MoOx dielectric layer (33.90% → 55.37%), which may indicate the establishment process of VO conductive filaments in the device. In addition, we have explored synaptic applications of RRAM devices with this structure and simulated a range of synaptic behaviors, demonstrating the potential of MoOx-based RRAM as an artificial synaptic device in neural morphology computing systems. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Improvement of MoO<subscript>x</subscript>-based RRAM performance by rapid thermal annealing process and its application in artificial synapse.
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  Data: <searchLink fieldCode="AR" term="%22Xu%2C+Xiaolei%22">Xu, Xiaolei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mi%2C+Wei%22">Mi, Wei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Di%22">Wang, Di</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22He%2C+Lin'an%22">He, Lin'an</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+He%22">Liu, He</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dong%2C+Chenming%22">Dong, Chenming</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Chunbo%22">Li, Chunbo</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Liwei%22">Zhou, Liwei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> lwzhou@email.tjut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Zhao%2C+Jinshi%22">Zhao, Jinshi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jinshi58@163.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>. Feb2025, Vol. 60 Issue 6, p2933-2947. 15p.
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  Data: <searchLink fieldCode="DE" term="%22Nonvolatile+random-access+memory%22">Nonvolatile random-access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Rapid+thermal+processing%22">Rapid thermal processing</searchLink><br /><searchLink fieldCode="DE" term="%22Oxygen+vacancy%22">Oxygen vacancy</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+systems%22">Computer systems</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This work presents the effect of the rapid thermal annealing (RTA) process on the performance of Ti/MoOx/Pt resistive random access memory (RRAM). Compared with the device without RTA treatment, the device processed in vacuum RTA (300 ℃,80 s) exhibits better resistance switching (RS) characteristics, including smaller forming voltage (Vf = 5.7 V) and set voltage (Vset = 1.41 V), stable high-resistance state (coefficient of variation = 5.91%) and 100 times storage window. This may be attributed to changes in oxygen vacancies (VO) content. The X-ray diffraction (XRD) analysis results indicate that the prepared MoOx thin films are all amorphous. X-ray photoelectron spectroscopic (XPS) analysis results indicate that vacuum RTA treatment increases the VO content in the MoOx dielectric layer, which may make it easier for thick conductive filaments to form. This leads to a reduction in the Vf and Vset, while also establishing a relatively fixed fracture position for conductive filaments, thereby achieving a stable high-resistance state. XPS depth profiling results of Device B before and after applying positive voltage indicate the formation of TiOx layer at the interface and the increase of VO in the MoOx dielectric layer (33.90% → 55.37%), which may indicate the establishment process of VO conductive filaments in the device. In addition, we have explored synaptic applications of RRAM devices with this structure and simulated a range of synaptic behaviors, demonstrating the potential of MoOx-based RRAM as an artificial synaptic device in neural morphology computing systems. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1007/s10853-025-10634-x
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 15
        StartPage: 2933
    Subjects:
      – SubjectFull: Nonvolatile random-access memory
        Type: general
      – SubjectFull: Rapid thermal processing
        Type: general
      – SubjectFull: Oxygen vacancy
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Computer systems
        Type: general
    Titles:
      – TitleFull: Improvement of MoOx-based RRAM performance by rapid thermal annealing process and its application in artificial synapse.
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            NameFull: Xu, Xiaolei
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            NameFull: Mi, Wei
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            NameFull: Wang, Di
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            NameFull: Liu, He
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            NameFull: Dong, Chenming
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            NameFull: Li, Chunbo
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            – D: 08
              M: 02
              Text: Feb2025
              Type: published
              Y: 2025
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