Semiconductor Material Damage Mechanisms Due to Non-Ionizing Energy in Space-Based Solar Systems.
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| Title: | Semiconductor Material Damage Mechanisms Due to Non-Ionizing Energy in Space-Based Solar Systems. |
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| Authors: | Peters, Anthony1 (AUTHOR) arp2225@columbia.edu, Preindl, Matthias1 (AUTHOR) matthias.preindl@columbia.edu, Fthenakis, Vasilis1,2 (AUTHOR) vmf5@columbia.edu |
| Source: | Energies (19961073). Feb2025, Vol. 18 Issue 3, p509. 16p. |
| Subjects: | Low earth orbit satellites, Geosynchronous orbits, Power semiconductors, Semiconductor materials, Energy dissipation, Astrophysical radiation |
| Abstract: | Radiation impacts on space-based systems operating on various orbits are evaluated in this paper. Specifically, satellite operations in Low Earth Orbit (LEO), Medium Earth Orbit (MEO), and Geosynchronous Orbit (GEO) are analyzed. Special focus is given on quantifying the effect of high-energy particle space radiation on materials used for critical power components, where component fault can lead to total mission failure. Methods, using multiple computational platforms for the quantification of non-ionizing energy loss (NIEL) and displacement damage dose (DDD), are used to assess semiconductor damage at specific orbital altitudes. Detailed simulations were conducted for Gallium Arsenide Indium Phosphide (GaInP/GaAs/Ge) solar cells with various cover glass thicknesses, and the survivability of GaInP/GaAs/Ge cells was compared with that of Si cells. It was assessed that radiation exposure due to high-energy protons at 10,000 km is more prevalent than 20,000 km orbits and that electron bombardment is a major electronic damage culprit. For MEO at 10,000 km, MEO at 20,000 km, and GEO at 36,000 km, we determined the 1-year maximum power (Pmax) losses due to protons to be 23%, 8%, and 1% and losses due to electrons to be 11%, 14%, and 10%. Total integrated spectra Pmax losses for those altitudes are 25%, 16%, and 10%, respectively. [ABSTRACT FROM AUTHOR] |
| Copyright of Energies (19961073) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 182985370 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Semiconductor Material Damage Mechanisms Due to Non-Ionizing Energy in Space-Based Solar Systems. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Peters%2C+Anthony%22">Peters, Anthony</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> arp2225@columbia.edu</i><br /><searchLink fieldCode="AR" term="%22Preindl%2C+Matthias%22">Preindl, Matthias</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> matthias.preindl@columbia.edu</i><br /><searchLink fieldCode="AR" term="%22Fthenakis%2C+Vasilis%22">Fthenakis, Vasilis</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> vmf5@columbia.edu</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Energies+%2819961073%29%22">Energies (19961073)</searchLink>. Feb2025, Vol. 18 Issue 3, p509. 16p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Low+earth+orbit+satellites%22">Low earth orbit satellites</searchLink><br /><searchLink fieldCode="DE" term="%22Geosynchronous+orbits%22">Geosynchronous orbits</searchLink><br /><searchLink fieldCode="DE" term="%22Power+semiconductors%22">Power semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+materials%22">Semiconductor materials</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+dissipation%22">Energy dissipation</searchLink><br /><searchLink fieldCode="DE" term="%22Astrophysical+radiation%22">Astrophysical radiation</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Radiation impacts on space-based systems operating on various orbits are evaluated in this paper. Specifically, satellite operations in Low Earth Orbit (LEO), Medium Earth Orbit (MEO), and Geosynchronous Orbit (GEO) are analyzed. Special focus is given on quantifying the effect of high-energy particle space radiation on materials used for critical power components, where component fault can lead to total mission failure. Methods, using multiple computational platforms for the quantification of non-ionizing energy loss (NIEL) and displacement damage dose (DDD), are used to assess semiconductor damage at specific orbital altitudes. Detailed simulations were conducted for Gallium Arsenide Indium Phosphide (GaInP/GaAs/Ge) solar cells with various cover glass thicknesses, and the survivability of GaInP/GaAs/Ge cells was compared with that of Si cells. It was assessed that radiation exposure due to high-energy protons at 10,000 km is more prevalent than 20,000 km orbits and that electron bombardment is a major electronic damage culprit. For MEO at 10,000 km, MEO at 20,000 km, and GEO at 36,000 km, we determined the 1-year maximum power (Pmax) losses due to protons to be 23%, 8%, and 1% and losses due to electrons to be 11%, 14%, and 10%. Total integrated spectra Pmax losses for those altitudes are 25%, 16%, and 10%, respectively. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Energies (19961073) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/en18030509 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 16 StartPage: 509 Subjects: – SubjectFull: Low earth orbit satellites Type: general – SubjectFull: Geosynchronous orbits Type: general – SubjectFull: Power semiconductors Type: general – SubjectFull: Semiconductor materials Type: general – SubjectFull: Energy dissipation Type: general – SubjectFull: Astrophysical radiation Type: general Titles: – TitleFull: Semiconductor Material Damage Mechanisms Due to Non-Ionizing Energy in Space-Based Solar Systems. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Peters, Anthony – PersonEntity: Name: NameFull: Preindl, Matthias – PersonEntity: Name: NameFull: Fthenakis, Vasilis IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 19961073 Numbering: – Type: volume Value: 18 – Type: issue Value: 3 Titles: – TitleFull: Energies (19961073) Type: main |
| ResultId | 1 |
