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Growth of TiSiN Films by Room-Temperature Reactive Magnetron Sputtering.

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Title: Growth of TiSiN Films by Room-Temperature Reactive Magnetron Sputtering.
Authors: Sulyaeva, V. S.1 (AUTHOR), Syrokvashin, M. M.1 (AUTHOR), Kozhevnikov, A. K.1 (AUTHOR), Ermakova, E. N.1 (AUTHOR) ermakova@niic.nsc.ru
Source: Inorganic Materials. Jun2024, Vol. 60 Issue 6, p723-730. 8p.
Subjects: Titanium nitride, Reactive sputtering, Silicon nitride, X-ray photoelectron spectroscopy, Magnetron sputtering
Abstract: TiSiN films have been grown by room-temperature reactive magnetron sputtering using a TiSi (10%) cathode of mixed composition. X-ray diffraction, elemental analysis, and X-ray photoelectron spectroscopy data indicated the formation of an amorphous phase containing nanocrystalline TiN inclusions having preferential orientation along the (200) plane, without silicon nitride inclusions. The obtained samples possessed hardness up to 31 GPa. Vacuum annealing at 500°C for 1 h led to an increase in the degree of crystallinity of the films, without changes in preferential orientation. X-ray diffraction characterization of the films annealed in air at temperatures of 500 and 700°C showed that they were oxidation-resistant at moderate temperatures. [ABSTRACT FROM AUTHOR]
Copyright of Inorganic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Growth of TiSiN Films by Room-Temperature Reactive Magnetron Sputtering.
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  Data: <searchLink fieldCode="DE" term="%22Titanium+nitride%22">Titanium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Reactive+sputtering%22">Reactive sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride%22">Silicon nitride</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink>
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  Data: TiSiN films have been grown by room-temperature reactive magnetron sputtering using a TiSi (10%) cathode of mixed composition. X-ray diffraction, elemental analysis, and X-ray photoelectron spectroscopy data indicated the formation of an amorphous phase containing nanocrystalline TiN inclusions having preferential orientation along the (200) plane, without silicon nitride inclusions. The obtained samples possessed hardness up to 31 GPa. Vacuum annealing at 500°C for 1 h led to an increase in the degree of crystallinity of the films, without changes in preferential orientation. X-ray diffraction characterization of the films annealed in air at temperatures of 500 and 700°C showed that they were oxidation-resistant at moderate temperatures. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Inorganic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1134/S0020168524700948
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      – SubjectFull: Silicon nitride
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      – SubjectFull: X-ray photoelectron spectroscopy
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              Text: Jun2024
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