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Coherent Structure in Indium Doped Phase Change Materials.

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Title: Coherent Structure in Indium Doped Phase Change Materials.
Authors: Wang, Rui1 (AUTHOR), Zheng, Yonghui1,2 (AUTHOR) 52214700045@stu.ecnu.edu.cn, Liu, Qianchen3 (AUTHOR), Wei, Tao1,3 (AUTHOR), Xin, Tianjiao1,2 (AUTHOR), Liu, Cheng1,3 (AUTHOR) liuqianchen2022@126.com, Tang, Qiongyan1 (AUTHOR), Shi, Guangjie1 (AUTHOR), Liu, Bo3 (AUTHOR), Cheng, Yan1 (AUTHOR)
Source: Materials (1996-1944). Mar2025, Vol. 18 Issue 5, p934. 9p.
Subjects: Phase change memory, Coherent structures, Phase change materials, Thermal stability, Phase separation
Abstract: Phase change memory (PCM) technology demonstrates significant potential as a next-generation non-volatile storage solution for information applications. Ge2Sb2Te5 (GST) alloy, the most well-established material employed in commercial PCM devices, exhibits limited thermal stability. Doping, as an effective approach for enhancing thermal stability, often induces element segregation and phase separation. This study systematically investigates the impact of indium (In) doping on GST phase-change material. Experimental results demonstrate that In doping significantly enhances the thermal stability of GST film. In17GST exhibits a 130 °C increase in crystallization temperature (from 181 °C to 311 °C). Especially, the introduction of In leads to the formation of In2Te3 phase, which exhibits a remarkably similar crystal structure to GST with only a ~2% lattice mismatch. Consequently, In2Te3 phase forms a coherent structure with GST lattice, thereby promoting the stability of the phase boundary. Additionally, In2Te3 phase facilitates efficient heating with a 5.7% improvement in heating efficiency (913 K vs. 864 K at 5 ns) and contributes to improved RESET operations in PCM devices. Our study lays the foundation for the composition and structure design for high thermal stability and low power consumption in PCM devices. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Coherent Structure in Indium Doped Phase Change Materials.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Wang%2C+Rui%22">Wang, Rui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zheng%2C+Yonghui%22">Zheng, Yonghui</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> 52214700045@stu.ecnu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Liu%2C+Qianchen%22">Liu, Qianchen</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wei%2C+Tao%22">Wei, Tao</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xin%2C+Tianjiao%22">Xin, Tianjiao</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Cheng%22">Liu, Cheng</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<i> liuqianchen2022@126.com</i><br /><searchLink fieldCode="AR" term="%22Tang%2C+Qiongyan%22">Tang, Qiongyan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shi%2C+Guangjie%22">Shi, Guangjie</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Bo%22">Liu, Bo</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cheng%2C+Yan%22">Cheng, Yan</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Mar2025, Vol. 18 Issue 5, p934. 9p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink><br /><searchLink fieldCode="DE" term="%22Coherent+structures%22">Coherent structures</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+change+materials%22">Phase change materials</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+stability%22">Thermal stability</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+separation%22">Phase separation</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Phase change memory (PCM) technology demonstrates significant potential as a next-generation non-volatile storage solution for information applications. Ge2Sb2Te5 (GST) alloy, the most well-established material employed in commercial PCM devices, exhibits limited thermal stability. Doping, as an effective approach for enhancing thermal stability, often induces element segregation and phase separation. This study systematically investigates the impact of indium (In) doping on GST phase-change material. Experimental results demonstrate that In doping significantly enhances the thermal stability of GST film. In17GST exhibits a 130 °C increase in crystallization temperature (from 181 °C to 311 °C). Especially, the introduction of In leads to the formation of In2Te3 phase, which exhibits a remarkably similar crystal structure to GST with only a ~2% lattice mismatch. Consequently, In2Te3 phase forms a coherent structure with GST lattice, thereby promoting the stability of the phase boundary. Additionally, In2Te3 phase facilitates efficient heating with a 5.7% improvement in heating efficiency (913 K vs. 864 K at 5 ns) and contributes to improved RESET operations in PCM devices. Our study lays the foundation for the composition and structure design for high thermal stability and low power consumption in PCM devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/ma18050934
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 934
    Subjects:
      – SubjectFull: Phase change memory
        Type: general
      – SubjectFull: Coherent structures
        Type: general
      – SubjectFull: Phase change materials
        Type: general
      – SubjectFull: Thermal stability
        Type: general
      – SubjectFull: Phase separation
        Type: general
    Titles:
      – TitleFull: Coherent Structure in Indium Doped Phase Change Materials.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Wang, Rui
      – PersonEntity:
          Name:
            NameFull: Zheng, Yonghui
      – PersonEntity:
          Name:
            NameFull: Liu, Qianchen
      – PersonEntity:
          Name:
            NameFull: Wei, Tao
      – PersonEntity:
          Name:
            NameFull: Xin, Tianjiao
      – PersonEntity:
          Name:
            NameFull: Liu, Cheng
      – PersonEntity:
          Name:
            NameFull: Tang, Qiongyan
      – PersonEntity:
          Name:
            NameFull: Shi, Guangjie
      – PersonEntity:
          Name:
            NameFull: Liu, Bo
      – PersonEntity:
          Name:
            NameFull: Cheng, Yan
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 19961944
          Numbering:
            – Type: volume
              Value: 18
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Materials (1996-1944)
              Type: main
ResultId 1