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Whole landscape of evolution and removal of boron catalytic graphitization of graphene for thermal management and electromagnetic interference shielding.

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Title: Whole landscape of evolution and removal of boron catalytic graphitization of graphene for thermal management and electromagnetic interference shielding.
Authors: Liu, Dong1,2 (AUTHOR), Wang, Zhe-Fan1,2 (AUTHOR), Jia, Hui1 (AUTHOR) jiahui@sxicc.ac.cn, Yi, Zong-lin1 (AUTHOR), Xie, Li-Jing1 (AUTHOR), Tao, Zechao1 (AUTHOR), Yan, Xi1 (AUTHOR), Jiang, Dong1,3 (AUTHOR), Fang, Kegong1 (AUTHOR), Kong, Qing-Qiang1 (AUTHOR), Chen, Cheng-Meng1,3 (AUTHOR) chencm@sxicc.ac.cn
Source: Applied Surface Science. Jun2025, Vol. 695, pN.PAG-N.PAG. 1p.
Subjects: X-ray absorption near edge structure, Carbon-based materials, Household electronics industry, Materials management, Thermal conductivity, Graphitization, Boron
Abstract: The thermalchemical evolution pathway of boron species might be BCO 2 →BC 2 O→BC 3 →B 4 C, which preferentially occurs in bulk phase than surface. BC 3 configuration enhances edge electron activity, and the transformation of BC 3 to B 4 C promotes growth of crystallites, enabling thermal conductivity of boron-doped graphene film with 24.9% higher than that of pure graphene film. [Display omitted] • The evolution process of boron functional groups is BCO 2 → BC 2 O → BC 3 from 700 to 1400 °C. BC 3 configuration enhances edge electron activity, facilitating the fusion of the graphene sheets; • A cause-and-effect relationship is verified between the chemical evolution of boron specie at high temperature and the crystallite growth at the graphitization process; • The GBF2800 exhibits excellent thermal conductivity of 1223.3W m−1 K−1, which is 24.9 % higher than that of GF2800. Moreover, the EMI SE is higher than 110 dB in X band. The boron catalytic graphitization mechanism is significant for increasing graphite crystallite size of carbon-based materials in thermal management and electromagnetic interference (EMI) shielding, which is urgently required for the consumer electronics and aerospace industries. However, because of the lack of an in-depth recognition of the boron catalytic graphitization, the optimization of intrinsic structure is hindered and the design of carbon materials for thermal management and EMI shielding is restricted. Herein, we systematically unveil of boron species, their geometrical and electronic structures on reactivity of graphitization. BC 3 configuration enhances edge electron activity, facilitating the fusion of the graphene sheets. The migration of carbon atoms, causes transformation of the BC 3 configuration into B 4 C intermediate, as evidenced by the X-ray absorption near edge structure (XANES) and density functional theory (DFT) calculations. Owing to the B 4 C via graphene proposing reactive wetting process, part of liquid state B 4 C is gradually removed via capillary channels from boron-assistant catalytic graphene films (GBF). Based on the mechanism, the prepared GBF finally possess high thermal conductivity (1223 W·m−1·K−1) and EMI shielding effectiveness (SE) of 112 dB in X band. This work reveals the graphitization process in microscale and paves the way for the development of carbon-based functional materials. [ABSTRACT FROM AUTHOR]
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Abstract:The thermalchemical evolution pathway of boron species might be BCO 2 →BC 2 O→BC 3 →B 4 C, which preferentially occurs in bulk phase than surface. BC 3 configuration enhances edge electron activity, and the transformation of BC 3 to B 4 C promotes growth of crystallites, enabling thermal conductivity of boron-doped graphene film with 24.9% higher than that of pure graphene film. [Display omitted] • The evolution process of boron functional groups is BCO 2 → BC 2 O → BC 3 from 700 to 1400 °C. BC 3 configuration enhances edge electron activity, facilitating the fusion of the graphene sheets; • A cause-and-effect relationship is verified between the chemical evolution of boron specie at high temperature and the crystallite growth at the graphitization process; • The GBF2800 exhibits excellent thermal conductivity of 1223.3W m−1 K−1, which is 24.9 % higher than that of GF2800. Moreover, the EMI SE is higher than 110 dB in X band. The boron catalytic graphitization mechanism is significant for increasing graphite crystallite size of carbon-based materials in thermal management and electromagnetic interference (EMI) shielding, which is urgently required for the consumer electronics and aerospace industries. However, because of the lack of an in-depth recognition of the boron catalytic graphitization, the optimization of intrinsic structure is hindered and the design of carbon materials for thermal management and EMI shielding is restricted. Herein, we systematically unveil of boron species, their geometrical and electronic structures on reactivity of graphitization. BC 3 configuration enhances edge electron activity, facilitating the fusion of the graphene sheets. The migration of carbon atoms, causes transformation of the BC 3 configuration into B 4 C intermediate, as evidenced by the X-ray absorption near edge structure (XANES) and density functional theory (DFT) calculations. Owing to the B 4 C via graphene proposing reactive wetting process, part of liquid state B 4 C is gradually removed via capillary channels from boron-assistant catalytic graphene films (GBF). Based on the mechanism, the prepared GBF finally possess high thermal conductivity (1223 W·m−1·K−1) and EMI shielding effectiveness (SE) of 112 dB in X band. This work reveals the graphitization process in microscale and paves the way for the development of carbon-based functional materials. [ABSTRACT FROM AUTHOR]
ISSN:01694332
DOI:10.1016/j.apsusc.2025.162631