Whole landscape of evolution and removal of boron catalytic graphitization of graphene for thermal management and electromagnetic interference shielding.

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Title: Whole landscape of evolution and removal of boron catalytic graphitization of graphene for thermal management and electromagnetic interference shielding.
Authors: Liu, Dong1,2 (AUTHOR), Wang, Zhe-Fan1,2 (AUTHOR), Jia, Hui1 (AUTHOR) jiahui@sxicc.ac.cn, Yi, Zong-lin1 (AUTHOR), Xie, Li-Jing1 (AUTHOR), Tao, Zechao1 (AUTHOR), Yan, Xi1 (AUTHOR), Jiang, Dong1,3 (AUTHOR), Fang, Kegong1 (AUTHOR), Kong, Qing-Qiang1 (AUTHOR), Chen, Cheng-Meng1,3 (AUTHOR) chencm@sxicc.ac.cn
Source: Applied Surface Science. Jun2025, Vol. 695, pN.PAG-N.PAG. 1p.
Subjects: X-ray absorption near edge structure, Carbon-based materials, Household electronics industry, Materials management, Thermal conductivity, Graphitization, Boron
Abstract: The thermalchemical evolution pathway of boron species might be BCO 2 →BC 2 O→BC 3 →B 4 C, which preferentially occurs in bulk phase than surface. BC 3 configuration enhances edge electron activity, and the transformation of BC 3 to B 4 C promotes growth of crystallites, enabling thermal conductivity of boron-doped graphene film with 24.9% higher than that of pure graphene film. [Display omitted] • The evolution process of boron functional groups is BCO 2 → BC 2 O → BC 3 from 700 to 1400 °C. BC 3 configuration enhances edge electron activity, facilitating the fusion of the graphene sheets; • A cause-and-effect relationship is verified between the chemical evolution of boron specie at high temperature and the crystallite growth at the graphitization process; • The GBF2800 exhibits excellent thermal conductivity of 1223.3W m−1 K−1, which is 24.9 % higher than that of GF2800. Moreover, the EMI SE is higher than 110 dB in X band. The boron catalytic graphitization mechanism is significant for increasing graphite crystallite size of carbon-based materials in thermal management and electromagnetic interference (EMI) shielding, which is urgently required for the consumer electronics and aerospace industries. However, because of the lack of an in-depth recognition of the boron catalytic graphitization, the optimization of intrinsic structure is hindered and the design of carbon materials for thermal management and EMI shielding is restricted. Herein, we systematically unveil of boron species, their geometrical and electronic structures on reactivity of graphitization. BC 3 configuration enhances edge electron activity, facilitating the fusion of the graphene sheets. The migration of carbon atoms, causes transformation of the BC 3 configuration into B 4 C intermediate, as evidenced by the X-ray absorption near edge structure (XANES) and density functional theory (DFT) calculations. Owing to the B 4 C via graphene proposing reactive wetting process, part of liquid state B 4 C is gradually removed via capillary channels from boron-assistant catalytic graphene films (GBF). Based on the mechanism, the prepared GBF finally possess high thermal conductivity (1223 W·m−1·K−1) and EMI shielding effectiveness (SE) of 112 dB in X band. This work reveals the graphitization process in microscale and paves the way for the development of carbon-based functional materials. [ABSTRACT FROM AUTHOR]
Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Whole landscape of evolution and removal of boron catalytic graphitization of graphene for thermal management and electromagnetic interference shielding.
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  Data: <searchLink fieldCode="AR" term="%22Liu%2C+Dong%22">Liu, Dong</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Zhe-Fan%22">Wang, Zhe-Fan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jia%2C+Hui%22">Jia, Hui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jiahui@sxicc.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Yi%2C+Zong-lin%22">Yi, Zong-lin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xie%2C+Li-Jing%22">Xie, Li-Jing</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tao%2C+Zechao%22">Tao, Zechao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yan%2C+Xi%22">Yan, Xi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiang%2C+Dong%22">Jiang, Dong</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fang%2C+Kegong%22">Fang, Kegong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kong%2C+Qing-Qiang%22">Kong, Qing-Qiang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Cheng-Meng%22">Chen, Cheng-Meng</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<i> chencm@sxicc.ac.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Surface+Science%22">Applied Surface Science</searchLink>. Jun2025, Vol. 695, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22X-ray+absorption+near+edge+structure%22">X-ray absorption near edge structure</searchLink><br /><searchLink fieldCode="DE" term="%22Carbon-based+materials%22">Carbon-based materials</searchLink><br /><searchLink fieldCode="DE" term="%22Household+electronics+industry%22">Household electronics industry</searchLink><br /><searchLink fieldCode="DE" term="%22Materials+management%22">Materials management</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+conductivity%22">Thermal conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Graphitization%22">Graphitization</searchLink><br /><searchLink fieldCode="DE" term="%22Boron%22">Boron</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The thermalchemical evolution pathway of boron species might be BCO 2 →BC 2 O→BC 3 →B 4 C, which preferentially occurs in bulk phase than surface. BC 3 configuration enhances edge electron activity, and the transformation of BC 3 to B 4 C promotes growth of crystallites, enabling thermal conductivity of boron-doped graphene film with 24.9% higher than that of pure graphene film. [Display omitted] • The evolution process of boron functional groups is BCO 2 → BC 2 O → BC 3 from 700 to 1400 °C. BC 3 configuration enhances edge electron activity, facilitating the fusion of the graphene sheets; • A cause-and-effect relationship is verified between the chemical evolution of boron specie at high temperature and the crystallite growth at the graphitization process; • The GBF2800 exhibits excellent thermal conductivity of 1223.3W m−1 K−1, which is 24.9 % higher than that of GF2800. Moreover, the EMI SE is higher than 110 dB in X band. The boron catalytic graphitization mechanism is significant for increasing graphite crystallite size of carbon-based materials in thermal management and electromagnetic interference (EMI) shielding, which is urgently required for the consumer electronics and aerospace industries. However, because of the lack of an in-depth recognition of the boron catalytic graphitization, the optimization of intrinsic structure is hindered and the design of carbon materials for thermal management and EMI shielding is restricted. Herein, we systematically unveil of boron species, their geometrical and electronic structures on reactivity of graphitization. BC 3 configuration enhances edge electron activity, facilitating the fusion of the graphene sheets. The migration of carbon atoms, causes transformation of the BC 3 configuration into B 4 C intermediate, as evidenced by the X-ray absorption near edge structure (XANES) and density functional theory (DFT) calculations. Owing to the B 4 C via graphene proposing reactive wetting process, part of liquid state B 4 C is gradually removed via capillary channels from boron-assistant catalytic graphene films (GBF). Based on the mechanism, the prepared GBF finally possess high thermal conductivity (1223 W·m−1·K−1) and EMI shielding effectiveness (SE) of 112 dB in X band. This work reveals the graphitization process in microscale and paves the way for the development of carbon-based functional materials. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.apsusc.2025.162631
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: X-ray absorption near edge structure
        Type: general
      – SubjectFull: Carbon-based materials
        Type: general
      – SubjectFull: Household electronics industry
        Type: general
      – SubjectFull: Materials management
        Type: general
      – SubjectFull: Thermal conductivity
        Type: general
      – SubjectFull: Graphitization
        Type: general
      – SubjectFull: Boron
        Type: general
    Titles:
      – TitleFull: Whole landscape of evolution and removal of boron catalytic graphitization of graphene for thermal management and electromagnetic interference shielding.
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            NameFull: Liu, Dong
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            – D: 30
              M: 06
              Text: Jun2025
              Type: published
              Y: 2025
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