View in EDS HTML Full Text PDF Full Text

Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices.

Saved in:
Bibliographic Details
Title: Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices.
Authors: Chen, Kai-Huang1 (AUTHOR), Kao, Ming-Cheng2 (AUTHOR), Chen, Hsin-Chin1 (AUTHOR), Wang, Yao-Chin1,2 (AUTHOR)
Source: Nanomaterials (2079-4991). Mar2025, Vol. 15 Issue 6, p448. 19p.
Subjects: Rare earth oxides, Nonvolatile random-access memory, Oxide coating, Aluminum electrodes, Random access memory
Abstract: In this study, the bipolar resistance switching behavior and electrical conduction transport properties of a neodymium oxide film's resistive random access memory (RRAM) devices for using different top electrode materials were observed and discussed. Different related electrical properties and transport mechanisms are important factors in applications in a film's RRAM devices. For aluminum top electrode materials, the electrical conduction mechanism of the neodymium oxide film's RRAM devices all exhibited hopping conduction behavior, with 1 mA and 10 mA compliance currents in the set state for low/high voltages applied. For TiN and ITO (Indium tin oxide) top electrode materials, the conduction mechanisms all exhibited ohmic conduction for the low voltage applied, and all exhibited hopping conduction behavior for the high voltage applied. In addition, the electrical field strength simulation resulted in an increase in the reset voltage, indicating that oxygen ions have diffused into the vicinity of the ITO electrode during the set operation. This was particularly the case in the three physical models proposed, and based on the relationship between different ITO electrode thicknesses and the oxygen ion concentration distribution effect of the neodymium oxide film's RRAM devices, they were investigated and discussed. To prove the oxygen concentration distribution expands over the area of the ITO electrode, the simulation software was used to analyze and simulate the distribution of the electric field for the Poisson equation. Finally, the neodymium oxide film's RRAM devices for using different top electrode materials all exhibited high memory window properties, bipolar resistance switching characteristics, and non-volatile properties for incorporation into next-generation non-volatile memory device applications in this study. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 184133725
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Chen%2C+Kai-Huang%22">Chen, Kai-Huang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kao%2C+Ming-Cheng%22">Kao, Ming-Cheng</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Hsin-Chin%22">Chen, Hsin-Chin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Yao-Chin%22">Wang, Yao-Chin</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Mar2025, Vol. 15 Issue 6, p448. 19p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Rare+earth+oxides%22">Rare earth oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Nonvolatile+random-access+memory%22">Nonvolatile random-access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Oxide+coating%22">Oxide coating</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum+electrodes%22">Aluminum electrodes</searchLink><br /><searchLink fieldCode="DE" term="%22Random+access+memory%22">Random access memory</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this study, the bipolar resistance switching behavior and electrical conduction transport properties of a neodymium oxide film's resistive random access memory (RRAM) devices for using different top electrode materials were observed and discussed. Different related electrical properties and transport mechanisms are important factors in applications in a film's RRAM devices. For aluminum top electrode materials, the electrical conduction mechanism of the neodymium oxide film's RRAM devices all exhibited hopping conduction behavior, with 1 mA and 10 mA compliance currents in the set state for low/high voltages applied. For TiN and ITO (Indium tin oxide) top electrode materials, the conduction mechanisms all exhibited ohmic conduction for the low voltage applied, and all exhibited hopping conduction behavior for the high voltage applied. In addition, the electrical field strength simulation resulted in an increase in the reset voltage, indicating that oxygen ions have diffused into the vicinity of the ITO electrode during the set operation. This was particularly the case in the three physical models proposed, and based on the relationship between different ITO electrode thicknesses and the oxygen ion concentration distribution effect of the neodymium oxide film's RRAM devices, they were investigated and discussed. To prove the oxygen concentration distribution expands over the area of the ITO electrode, the simulation software was used to analyze and simulate the distribution of the electric field for the Poisson equation. Finally, the neodymium oxide film's RRAM devices for using different top electrode materials all exhibited high memory window properties, bipolar resistance switching characteristics, and non-volatile properties for incorporation into next-generation non-volatile memory device applications in this study. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=184133725
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/nano15060448
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 19
        StartPage: 448
    Subjects:
      – SubjectFull: Rare earth oxides
        Type: general
      – SubjectFull: Nonvolatile random-access memory
        Type: general
      – SubjectFull: Oxide coating
        Type: general
      – SubjectFull: Aluminum electrodes
        Type: general
      – SubjectFull: Random access memory
        Type: general
    Titles:
      – TitleFull: Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Chen, Kai-Huang
      – PersonEntity:
          Name:
            NameFull: Kao, Ming-Cheng
      – PersonEntity:
          Name:
            NameFull: Chen, Hsin-Chin
      – PersonEntity:
          Name:
            NameFull: Wang, Yao-Chin
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 03
              Text: Mar2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 20794991
          Numbering:
            – Type: volume
              Value: 15
            – Type: issue
              Value: 6
          Titles:
            – TitleFull: Nanomaterials (2079-4991)
              Type: main
ResultId 1