Tailoring charge transport in BaTiO3 crystals through dislocation engineering.
Saved in:
| Title: | Tailoring charge transport in BaTiO |
|---|---|
| Authors: | Sayyadi‐Shahraki, Ahmad1,2 (AUTHOR) a.sayyadi@iut.ac.ir, Frömling, Till1,3 (AUTHOR), Zhuo, Fangping1 (AUTHOR) zhuo@ceramics.tu-darmstadt.de |
| Source: | Journal of the American Ceramic Society. Jun2025, Vol. 108 Issue 6, p1-9. 9p. |
| Subjects: | Dislocations in crystals, Dislocation structure, Ferroelectric materials, Oxide ceramics, Electric conductivity |
| Abstract: | Dislocations in oxide ceramics significantly influence their physical properties by creating substantial local strain fields, new electronic states, and space‐charge layers. In this study, we investigated the effects of mechanically introduced dislocations on the electrical conductivity of BaTiO3 single crystals. High‐temperature plastic deformation was employed to introduce a high dislocation density with a {100}〈100〉 slip system. Impedance measurements revealed a significant anisotropy in the conductivity due to the presence of oriented dislocation structures. The crystals with dislocation lines aligned parallel to the measurement axis ([001] crystallographic direction) exhibited 16‐fold higher conductivity compared to those measured across the dislocations. Compared to the pristine crystals, this means an increase in conductivity when the measurements were carried out parallel to dislocation lines and a decrease in perpendicular measurements. Our study demonstrates that not only ferroelectric properties but also charge transport can be modified by dislocation introduction in BaTiO3. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of the American Ceramic Society is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| Abstract: | Dislocations in oxide ceramics significantly influence their physical properties by creating substantial local strain fields, new electronic states, and space‐charge layers. In this study, we investigated the effects of mechanically introduced dislocations on the electrical conductivity of BaTiO3 single crystals. High‐temperature plastic deformation was employed to introduce a high dislocation density with a {100}〈100〉 slip system. Impedance measurements revealed a significant anisotropy in the conductivity due to the presence of oriented dislocation structures. The crystals with dislocation lines aligned parallel to the measurement axis ([001] crystallographic direction) exhibited 16‐fold higher conductivity compared to those measured across the dislocations. Compared to the pristine crystals, this means an increase in conductivity when the measurements were carried out parallel to dislocation lines and a decrease in perpendicular measurements. Our study demonstrates that not only ferroelectric properties but also charge transport can be modified by dislocation introduction in BaTiO3. [ABSTRACT FROM AUTHOR] |
|---|---|
| ISSN: | 00027820 |
| DOI: | 10.1111/jace.20147 |
