Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach.
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| Title: | Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach. |
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| Authors: | Vinothkumar, K.1 (AUTHOR) vinothdgl91@psnacet.edu.in, Rahuman, A. Kaleel1 (AUTHOR) kaleel23@gmail.com |
| Source: | Optical & Quantum Electronics. Mar2025, Vol. 57 Issue 3, p1-21. 21p. |
| Subjects: | Electric currents, Separation of variables, Shortwave radio, Surface potential, Electric fields |
| Abstract: | The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current (I d) , electric field (E f ), and threshold voltage (V th ) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator. [ABSTRACT FROM AUTHOR] |
| Copyright of Optical & Quantum Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 184303594 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Vinothkumar%2C+K%2E%22">Vinothkumar, K.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> vinothdgl91@psnacet.edu.in</i><br /><searchLink fieldCode="AR" term="%22Rahuman%2C+A%2E+Kaleel%22">Rahuman, A. Kaleel</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> kaleel23@gmail.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Optical+%26+Quantum+Electronics%22">Optical & Quantum Electronics</searchLink>. Mar2025, Vol. 57 Issue 3, p1-21. 21p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Electric+currents%22">Electric currents</searchLink><br /><searchLink fieldCode="DE" term="%22Separation+of+variables%22">Separation of variables</searchLink><br /><searchLink fieldCode="DE" term="%22Shortwave+radio%22">Shortwave radio</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+potential%22">Surface potential</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current (I d) , electric field (E f ), and threshold voltage (V th ) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Optical & Quantum Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11082-025-08104-4 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 21 StartPage: 1 Subjects: – SubjectFull: Electric currents Type: general – SubjectFull: Separation of variables Type: general – SubjectFull: Shortwave radio Type: general – SubjectFull: Surface potential Type: general – SubjectFull: Electric fields Type: general Titles: – TitleFull: Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Vinothkumar, K. – PersonEntity: Name: NameFull: Rahuman, A. Kaleel IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 03 Text: Mar2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03068919 Numbering: – Type: volume Value: 57 – Type: issue Value: 3 Titles: – TitleFull: Optical & Quantum Electronics Type: main |
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