Comparative Analysis of Temperature-Dependent Characteristics of GaAs and InGaAs Quantum Wire-Based Heterostructures.
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| Title: | Comparative Analysis of Temperature-Dependent Characteristics of GaAs and InGaAs Quantum Wire-Based Heterostructures. |
|---|---|
| Authors: | Mezhoud, Leila1 (AUTHOR), Sengouga, Nouredine1 (AUTHOR) n.sengouga@univ-biskra.dz, Meftah, Amjad1 (AUTHOR), Al Saqri, Noor Alhuda2 (AUTHOR), Henini, Mohamed3 (AUTHOR) |
| Source: | Journal of Electronic Materials. May2025, Vol. 54 Issue 5, p4123-4129. 7p. |
| Subjects: | Nanowires, Thermionic emission, Indium gallium arsenide, Low temperatures, Gallium arsenide |
| Abstract: | This study aims to investigate the temperature dependence of current–voltage characteristics in four GaAs-based heterojunctions: (1) a simple PN junction, (2) a simple PIN junction, (3) a PIN junction with undoped one-dimensional InGaAs quantum wires (QWRs), and (4) a PIN junction with one-dimensional δ-doped InGaAs QWRs. Measurements were carried out over a temperature range of 20–340 K. The temperature dependence of the I–V characteristics was analysed using thermionic emission theory to reveal the conduction mechanisms. The figures of merit (FOM), including the saturation current, I 0 , the barrier height, ϕ B , and the ideality factor, η , were extracted from the measured I–V–T characteristics. It was observed that I 0 increased with temperature, which was due to an increase in the intrinsic density (ni). Additionally, ϕ B increased and η decreased with increasing temperature, indicating the inhomogeneity of the Schottky barrier in the temperature range of 280–340 K and the dominance of tunnelling through the barrier at lower temperatures. However, the tunnelling phenomenon was more pronounced for the δ-doped GaAs PIN structure with one-dimensional InGaAs QWRs. The novelty of this work lies mainly in the study of the conduction mechanisms in the different structures. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 184385992 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Comparative Analysis of Temperature-Dependent Characteristics of GaAs and InGaAs Quantum Wire-Based Heterostructures. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Mezhoud%2C+Leila%22">Mezhoud, Leila</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sengouga%2C+Nouredine%22">Sengouga, Nouredine</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> n.sengouga@univ-biskra.dz</i><br /><searchLink fieldCode="AR" term="%22Meftah%2C+Amjad%22">Meftah, Amjad</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Al+Saqri%2C+Noor+Alhuda%22">Al Saqri, Noor Alhuda</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Henini%2C+Mohamed%22">Henini, Mohamed</searchLink><relatesTo>3</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. May2025, Vol. 54 Issue 5, p4123-4129. 7p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Thermionic+emission%22">Thermionic emission</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+gallium+arsenide%22">Indium gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Low+temperatures%22">Low temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This study aims to investigate the temperature dependence of current–voltage characteristics in four GaAs-based heterojunctions: (1) a simple PN junction, (2) a simple PIN junction, (3) a PIN junction with undoped one-dimensional InGaAs quantum wires (QWRs), and (4) a PIN junction with one-dimensional δ-doped InGaAs QWRs. Measurements were carried out over a temperature range of 20–340 K. The temperature dependence of the I–V characteristics was analysed using thermionic emission theory to reveal the conduction mechanisms. The figures of merit (FOM), including the saturation current, I 0 , the barrier height, ϕ B , and the ideality factor, η , were extracted from the measured I–V–T characteristics. It was observed that I 0 increased with temperature, which was due to an increase in the intrinsic density (ni). Additionally, ϕ B increased and η decreased with increasing temperature, indicating the inhomogeneity of the Schottky barrier in the temperature range of 280–340 K and the dominance of tunnelling through the barrier at lower temperatures. However, the tunnelling phenomenon was more pronounced for the δ-doped GaAs PIN structure with one-dimensional InGaAs QWRs. The novelty of this work lies mainly in the study of the conduction mechanisms in the different structures. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-025-11841-7 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 4123 Subjects: – SubjectFull: Nanowires Type: general – SubjectFull: Thermionic emission Type: general – SubjectFull: Indium gallium arsenide Type: general – SubjectFull: Low temperatures Type: general – SubjectFull: Gallium arsenide Type: general Titles: – TitleFull: Comparative Analysis of Temperature-Dependent Characteristics of GaAs and InGaAs Quantum Wire-Based Heterostructures. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Mezhoud, Leila – PersonEntity: Name: NameFull: Sengouga, Nouredine – PersonEntity: Name: NameFull: Meftah, Amjad – PersonEntity: Name: NameFull: Al Saqri, Noor Alhuda – PersonEntity: Name: NameFull: Henini, Mohamed IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 54 – Type: issue Value: 5 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |
