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Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.

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Title: Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.
Authors: Berezhinskiı, L. I.1, Venger, E. F.1, Matyash, I. E.1, Sachenko, A. V.1, Serdega, B. K.1 serdega@isp.kiev.ua
Source: Semiconductors. Oct2005, Vol. 39 Issue 10, p1122-1127. 6p. 5 Diagrams, 1 Chart.
Subjects: Absorbance scale (Spectroscopy), Absorption spectra, Spectrophotometry, Spectrum analysis, Dichroism, Optical polarization, Silicon, Nonmetals, Electric conductivity, Semiconductors
Abstract: Junction-photovoltage pleochroism is studied in crystalline silicon under the conditions of a conductivity anisotropy induced by a uniaxial compressive strain. Polarization modulation of light has been used: the samples are excited by linearly polarized light, with the polarizations periodically alternating with respect to the optical axis. The spectral characteristics obtained in such a way represent the polarization difference of the photovoltages, which depends on the light absorbance. A heavy dependence of the spectrum shape on the type of p–n junctions, which differ in relation to base parameters and emitter technologies, is detected. An analysis of the spectra shows that the condition of physical differentiation with respect to absorbance is satisfied only in p–n junctions with a negligible space-charge thickness. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="DE" term="%22Absorbance+scale+%28Spectroscopy%29%22">Absorbance scale (Spectroscopy)</searchLink><br /><searchLink fieldCode="DE" term="%22Absorption+spectra%22">Absorption spectra</searchLink><br /><searchLink fieldCode="DE" term="%22Spectrophotometry%22">Spectrophotometry</searchLink><br /><searchLink fieldCode="DE" term="%22Spectrum+analysis%22">Spectrum analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Dichroism%22">Dichroism</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+polarization%22">Optical polarization</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Nonmetals%22">Nonmetals</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink>
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  Data: Junction-photovoltage pleochroism is studied in crystalline silicon under the conditions of a conductivity anisotropy induced by a uniaxial compressive strain. Polarization modulation of light has been used: the samples are excited by linearly polarized light, with the polarizations periodically alternating with respect to the optical axis. The spectral characteristics obtained in such a way represent the polarization difference of the photovoltages, which depends on the light absorbance. A heavy dependence of the spectrum shape on the type of p–n junctions, which differ in relation to base parameters and emitter technologies, is detected. An analysis of the spectra shows that the condition of physical differentiation with respect to absorbance is satisfied only in p–n junctions with a negligible space-charge thickness. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – TitleFull: Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.
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