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The Effect of Al 2 O 3 Nanoparticles on Hexagonal Boron Nitride Films Resulting from High-Temperature Annealing.

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Title: The Effect of Al 2 O 3 Nanoparticles on Hexagonal Boron Nitride Films Resulting from High-Temperature Annealing.
Authors: Li, Qiang1,2 (AUTHOR) liukang4142@stu.xjtu.edu.cn, Liu, Kangkang1,2 (AUTHOR), Chen, Ransheng2,3 (AUTHOR), Fang, Wannian2,4 (AUTHOR), Zhang, Zhihao2,5 (AUTHOR), Chen, Youwei1,2 (AUTHOR), Liu, Haifeng2 (AUTHOR), Lin, Ziyan2,3 (AUTHOR), Liu, Yuhuai3,4 (AUTHOR), Wang, Tao5 (AUTHOR) wangt61@cardiff.ac.uk
Source: Nanomaterials (2079-4991). Apr2025, Vol. 15 Issue 7, p484. 11p.
Subjects: Radiofrequency sputtering, Magnetron sputtering, Aluminum oxide, Transition temperature, Thin films
Abstract: A simple two-step approach was proposed to obtain hBN thin films with high crystalline quality, meaning that the films were initially prepared by using an RF magnetron sputtering technique and subsequently followed by a post-annealing process at a high temperature. In the case of introducing Al2O3 nanoparticles, the effects of annealing temperature from 1000 °C to 1300 °C and annealing time from 0.5 h to 1.5 h on the recrystallization process of the grown hBN films were systematically studied by using XRD and SEM technologies. The introduction of Al2O3 impurities during the annealing process successfully reduced the transition temperature of hexagonal phase BN by more than 300 °C. The crystalline quality of hBN films grown by RF magnetron sputtering could be effectively enhanced under annealing at 1100 °C for 1 h. The DUV detectors were prepared using the hBN films before and after annealing, and showed a notable improvement in detector performance by using annealed films. It has significant application value in further enhancing the performance of DUV photodetectors based on high-quality hBN films. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: The Effect of Al 2 O 3 Nanoparticles on Hexagonal Boron Nitride Films Resulting from High-Temperature Annealing.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Li%2C+Qiang%22">Li, Qiang</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> liukang4142@stu.xjtu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Liu%2C+Kangkang%22">Liu, Kangkang</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Ransheng%22">Chen, Ransheng</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fang%2C+Wannian%22">Fang, Wannian</searchLink><relatesTo>2,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Zhihao%22">Zhang, Zhihao</searchLink><relatesTo>2,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Youwei%22">Chen, Youwei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Haifeng%22">Liu, Haifeng</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lin%2C+Ziyan%22">Lin, Ziyan</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Yuhuai%22">Liu, Yuhuai</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Tao%22">Wang, Tao</searchLink><relatesTo>5</relatesTo> (AUTHOR)<i> wangt61@cardiff.ac.uk</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Apr2025, Vol. 15 Issue 7, p484. 11p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum+oxide%22">Aluminum oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+temperature%22">Transition temperature</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A simple two-step approach was proposed to obtain hBN thin films with high crystalline quality, meaning that the films were initially prepared by using an RF magnetron sputtering technique and subsequently followed by a post-annealing process at a high temperature. In the case of introducing Al2O3 nanoparticles, the effects of annealing temperature from 1000 °C to 1300 °C and annealing time from 0.5 h to 1.5 h on the recrystallization process of the grown hBN films were systematically studied by using XRD and SEM technologies. The introduction of Al2O3 impurities during the annealing process successfully reduced the transition temperature of hexagonal phase BN by more than 300 °C. The crystalline quality of hBN films grown by RF magnetron sputtering could be effectively enhanced under annealing at 1100 °C for 1 h. The DUV detectors were prepared using the hBN films before and after annealing, and showed a notable improvement in detector performance by using annealed films. It has significant application value in further enhancing the performance of DUV photodetectors based on high-quality hBN films. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/nano15070484
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 484
    Subjects:
      – SubjectFull: Radiofrequency sputtering
        Type: general
      – SubjectFull: Magnetron sputtering
        Type: general
      – SubjectFull: Aluminum oxide
        Type: general
      – SubjectFull: Transition temperature
        Type: general
      – SubjectFull: Thin films
        Type: general
    Titles:
      – TitleFull: The Effect of Al 2 O 3 Nanoparticles on Hexagonal Boron Nitride Films Resulting from High-Temperature Annealing.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Li, Qiang
      – PersonEntity:
          Name:
            NameFull: Liu, Kangkang
      – PersonEntity:
          Name:
            NameFull: Chen, Ransheng
      – PersonEntity:
          Name:
            NameFull: Fang, Wannian
      – PersonEntity:
          Name:
            NameFull: Zhang, Zhihao
      – PersonEntity:
          Name:
            NameFull: Chen, Youwei
      – PersonEntity:
          Name:
            NameFull: Liu, Haifeng
      – PersonEntity:
          Name:
            NameFull: Lin, Ziyan
      – PersonEntity:
          Name:
            NameFull: Liu, Yuhuai
      – PersonEntity:
          Name:
            NameFull: Wang, Tao
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 20794991
          Numbering:
            – Type: volume
              Value: 15
            – Type: issue
              Value: 7
          Titles:
            – TitleFull: Nanomaterials (2079-4991)
              Type: main
ResultId 1