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Fabrication and characterization of WS2/AlN/Si S-I-S heterojunction for emergent material photovoltaic applications.

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Title: Fabrication and characterization of WS2/AlN/Si S-I-S heterojunction for emergent material photovoltaic applications.
Authors: Benhaliliba, M.1 (AUTHOR) mbenhaliliba@gmail.com, Kaya, M. Dönmez2,3 (AUTHOR), Özçelik, S.2,3 (AUTHOR), Benouis, C. E.1 (AUTHOR), Dris, K.1 (AUTHOR)
Source: Applied Physics A: Materials Science & Processing. Apr2025, Vol. 131 Issue 4, p1-13. 13p.
Subjects: Aluminum nitride, Radiofrequency sputtering, Locker rooms, Surface morphology, Heterojunctions
Abstract: Here, the WS2/AlN/Si semiconductor-insulator-semiconductor (SIS) heterojunction based inorganic tungsten disulfide chalcogenide compound with the insertion of 10 nm thick Aluminium nitride (AlN) layer as insulator is investigated. Our study focuses on structural, surface morphology, optical and electrical properties of S-I-S heterojunction, fabricated by RF sputtering process, as a result of both WS2 (10, 50 and 100 nm) thickness and light conditons change at room temperature (RT). The grain size determined by X-ray is smaller around 42 nm which confirms the nanostructural aspect. This aspect is also revealed by AFM and SEM observations. The transmittance (T) of three samples declines from 90.8 to 59.3% when WS2 thickness rises. İt is observed that T-λ curves augment from UV range to Vis to highest point in IR band. The current versus voltage (I-V) characteristics of S-I-S are investigated in dark, solar simulator and filter 780 nm conditions. Related parameters are extracted from I-V curves showing an increase in both ideality factor and saturation current with WS2 layer thickness. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Fabrication and characterization of WS<subscript>2</subscript>/AlN/Si S-I-S heterojunction for emergent material photovoltaic applications.
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  Data: <searchLink fieldCode="AR" term="%22Benhaliliba%2C+M%2E%22">Benhaliliba, M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mbenhaliliba@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Kaya%2C+M%2E+Dönmez%22">Kaya, M. Dönmez</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Özçelik%2C+S%2E%22">Özçelik, S.</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Benouis%2C+C%2E+E%2E%22">Benouis, C. E.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dris%2C+K%2E%22">Dris, K.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. Apr2025, Vol. 131 Issue 4, p1-13. 13p.
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  Data: <searchLink fieldCode="DE" term="%22Aluminum+nitride%22">Aluminum nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Locker+rooms%22">Locker rooms</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+morphology%22">Surface morphology</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink>
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  Data: Here, the WS2/AlN/Si semiconductor-insulator-semiconductor (SIS) heterojunction based inorganic tungsten disulfide chalcogenide compound with the insertion of 10 nm thick Aluminium nitride (AlN) layer as insulator is investigated. Our study focuses on structural, surface morphology, optical and electrical properties of S-I-S heterojunction, fabricated by RF sputtering process, as a result of both WS2 (10, 50 and 100 nm) thickness and light conditons change at room temperature (RT). The grain size determined by X-ray is smaller around 42 nm which confirms the nanostructural aspect. This aspect is also revealed by AFM and SEM observations. The transmittance (T) of three samples declines from 90.8 to 59.3% when WS2 thickness rises. İt is observed that T-λ curves augment from UV range to Vis to highest point in IR band. The current versus voltage (I-V) characteristics of S-I-S are investigated in dark, solar simulator and filter 780 nm conditions. Related parameters are extracted from I-V curves showing an increase in both ideality factor and saturation current with WS2 layer thickness. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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              Text: Apr2025
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