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A Reconfigurable Mem-Element Using CMOS Current Amplifiers.

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Title: A Reconfigurable Mem-Element Using CMOS Current Amplifiers.
Authors: Alkhalifa, Ibrahim1 (AUTHOR), Alzaher, Hussain2 (AUTHOR) alzaherh@kfupm.edu.sa
Source: Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ). Apr2025, Vol. 50 Issue 8, p6181-6191. 11p.
Subjects: CMOS amplifiers, Complementary metal oxide semiconductors, Bandwidths, Prototypes, Memory
Abstract: There is a plethora of mem-element emulators using different active devices, current amplifier (CA) based memristor, memcapacitors, and meminductor have not been reported in the literature. Although the CA is one of the four fundamental amplifier types, its applications has been limited because synthesis of CA based circuits is challenging. The main contributions of this paper are presenting these missing emulator circuits and demonstrating the realization of a novel universal reconfigurable mem-element using CAs realized in CMOS technology. Since CAs have the potential advantage of offering wide bandwidth compared to its voltage-mode counterparts, these new circuits inherently would exhibit improved frequency response. Various types of mem-elements using only CAs and a multiplier are developed in this work. Starting from the mathematical foundation of the linear model of a mem-element, this work provides a systematic approach leading to the design of a novel reconfigurable mem-element based on CAs. The proposed mem-elements are designed in 180 nm TSMC CMOS process. Cadence simulations show an operating frequency up to 1 MHz while consuming less than 3 mW. Also, experimental results using a prototype implemented using commercially available ICs show the validity of the proposed designs. [ABSTRACT FROM AUTHOR]
Copyright of Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ) is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: A Reconfigurable Mem-Element Using CMOS Current Amplifiers.
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  Data: <searchLink fieldCode="AR" term="%22Alkhalifa%2C+Ibrahim%22">Alkhalifa, Ibrahim</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alzaher%2C+Hussain%22">Alzaher, Hussain</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> alzaherh@kfupm.edu.sa</i>
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  Data: <searchLink fieldCode="DE" term="%22CMOS+amplifiers%22">CMOS amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Bandwidths%22">Bandwidths</searchLink><br /><searchLink fieldCode="DE" term="%22Prototypes%22">Prototypes</searchLink><br /><searchLink fieldCode="DE" term="%22Memory%22">Memory</searchLink>
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  Label: Abstract
  Group: Ab
  Data: There is a plethora of mem-element emulators using different active devices, current amplifier (CA) based memristor, memcapacitors, and meminductor have not been reported in the literature. Although the CA is one of the four fundamental amplifier types, its applications has been limited because synthesis of CA based circuits is challenging. The main contributions of this paper are presenting these missing emulator circuits and demonstrating the realization of a novel universal reconfigurable mem-element using CAs realized in CMOS technology. Since CAs have the potential advantage of offering wide bandwidth compared to its voltage-mode counterparts, these new circuits inherently would exhibit improved frequency response. Various types of mem-elements using only CAs and a multiplier are developed in this work. Starting from the mathematical foundation of the linear model of a mem-element, this work provides a systematic approach leading to the design of a novel reconfigurable mem-element based on CAs. The proposed mem-elements are designed in 180 nm TSMC CMOS process. Cadence simulations show an operating frequency up to 1 MHz while consuming less than 3 mW. Also, experimental results using a prototype implemented using commercially available ICs show the validity of the proposed designs. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ) is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s13369-024-09867-w
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 6181
    Subjects:
      – SubjectFull: CMOS amplifiers
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
      – SubjectFull: Bandwidths
        Type: general
      – SubjectFull: Prototypes
        Type: general
      – SubjectFull: Memory
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      – TitleFull: A Reconfigurable Mem-Element Using CMOS Current Amplifiers.
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              M: 04
              Text: Apr2025
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              Y: 2025
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