View in EDS

Modification of TiO2 template with In2S3 for quasi-epitaxial growth of Sb2S3 thin film solar cells.

Saved in:
Bibliographic Details
Title: Modification of TiO2 template with In2S3 for quasi-epitaxial growth of Sb2S3 thin film solar cells.
Authors: Zhan, Ya-Lu1 (AUTHOR), Li, Hu1 (AUTHOR), Cai, Jin-Rui1 (AUTHOR), Zhang, Jun-Cai1 (AUTHOR), Cai, Li-Ping1,2 (AUTHOR) cailp108@163.com, Lin, Li-Mei1,2 (AUTHOR) linlm@fjnu.edu.cn, Huang, Zhi-Ping1 (AUTHOR), Chen, Gui-Lin1,2 (AUTHOR) glchen@fjnu.edu.cn
Source: Semiconductor Science & Technology. May2025, Vol. 40 Issue 5, p1-9. 9p.
Subjects: Solar cells, Band gaps, Electron transport, Rock groups, Thin films
Abstract: Thin film solar cells based on the wide band gap absorber antimony sulfide (Sb2S3) have great application potential and prospect. Typical Sb2S3 thin-film solar cells usually use a low-cost solution method (such as hydrothermal deposition) to prepare the light-absorbing material, and use a toxic CdS film with a narrow band gap (about 2.4 eV) as the electron transport layer (ETL). TiO2, a non-toxic ETL alternative with a wide band gap (3.1–3.4 eV), fulfills the photoelectric needs of the ETL. But when the TiO2 is used as a template for Sb2S3 deposition, it shows an island of uneven growth. Herein, an ion layer adsorption and reaction method was used to modify the surface of TiO2 with an ultra-thin layer of In2S3, thereby improving the nucleation and growth characteristics of Sb2S3 during hydrothermal deposition. In this way, the Sb2S3 film forms a compact and specular state on the TiO2 surface similar to that on the CdS surface, realizing the quasi-epitaxial growth of the Sb2S3 film, which provides a new solution for efficient and environmentally friendly solar cells. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 184919675
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Modification of TiO<subscript>2</subscript> template with In<subscript>2</subscript>S<subscript>3</subscript> for quasi-epitaxial growth of Sb<subscript>2</subscript>S<subscript>3</subscript> thin film solar cells.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Zhan%2C+Ya-Lu%22">Zhan, Ya-Lu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Hu%22">Li, Hu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cai%2C+Jin-Rui%22">Cai, Jin-Rui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Jun-Cai%22">Zhang, Jun-Cai</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cai%2C+Li-Ping%22">Cai, Li-Ping</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> cailp108@163.com</i><br /><searchLink fieldCode="AR" term="%22Lin%2C+Li-Mei%22">Lin, Li-Mei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> linlm@fjnu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Huang%2C+Zhi-Ping%22">Huang, Zhi-Ping</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Gui-Lin%22">Chen, Gui-Lin</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> glchen@fjnu.edu.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>. May2025, Vol. 40 Issue 5, p1-9. 9p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+transport%22">Electron transport</searchLink><br /><searchLink fieldCode="DE" term="%22Rock+groups%22">Rock groups</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Thin film solar cells based on the wide band gap absorber antimony sulfide (Sb2S3) have great application potential and prospect. Typical Sb2S3 thin-film solar cells usually use a low-cost solution method (such as hydrothermal deposition) to prepare the light-absorbing material, and use a toxic CdS film with a narrow band gap (about 2.4 eV) as the electron transport layer (ETL). TiO2, a non-toxic ETL alternative with a wide band gap (3.1–3.4 eV), fulfills the photoelectric needs of the ETL. But when the TiO2 is used as a template for Sb2S3 deposition, it shows an island of uneven growth. Herein, an ion layer adsorption and reaction method was used to modify the surface of TiO2 with an ultra-thin layer of In2S3, thereby improving the nucleation and growth characteristics of Sb2S3 during hydrothermal deposition. In this way, the Sb2S3 film forms a compact and specular state on the TiO2 surface similar to that on the CdS surface, realizing the quasi-epitaxial growth of the Sb2S3 film, which provides a new solution for efficient and environmentally friendly solar cells. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=184919675
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1088/1361-6641/adc94c
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 1
    Subjects:
      – SubjectFull: Solar cells
        Type: general
      – SubjectFull: Band gaps
        Type: general
      – SubjectFull: Electron transport
        Type: general
      – SubjectFull: Rock groups
        Type: general
      – SubjectFull: Thin films
        Type: general
    Titles:
      – TitleFull: Modification of TiO2 template with In2S3 for quasi-epitaxial growth of Sb2S3 thin film solar cells.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Zhan, Ya-Lu
      – PersonEntity:
          Name:
            NameFull: Li, Hu
      – PersonEntity:
          Name:
            NameFull: Cai, Jin-Rui
      – PersonEntity:
          Name:
            NameFull: Zhang, Jun-Cai
      – PersonEntity:
          Name:
            NameFull: Cai, Li-Ping
      – PersonEntity:
          Name:
            NameFull: Lin, Li-Mei
      – PersonEntity:
          Name:
            NameFull: Huang, Zhi-Ping
      – PersonEntity:
          Name:
            NameFull: Chen, Gui-Lin
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 05
              Text: May2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 02681242
          Numbering:
            – Type: volume
              Value: 40
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Semiconductor Science & Technology
              Type: main
ResultId 1