Study of Oxide Material Variation on Electrical Characteristics and Linearity Parameters Induced in Vertical Nanowire TFET.
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| Title: | Study of Oxide Material Variation on Electrical Characteristics and Linearity Parameters Induced in Vertical Nanowire TFET. |
|---|---|
| Authors: | Bhardwaj, Anjana1 (AUTHOR), Das, Amit1 (AUTHOR) amitofficial7492@gmail.com, Rai, Amrita2 (AUTHOR), Krishna, Ram3 (AUTHOR), Upadhyay, A. K.4 (AUTHOR) |
| Source: | Semiconductors. May2025, Vol. 59 Issue 5, p474-482. 9p. |
| Subjects: | Tunnel field-effect transistors, Intermodulation distortion, Semiconductor industry, Aluminum oxide, Oxides |
| Abstract: | The oxide material in a tunnel FET (TFET) plays an important role in the electrical characteristics of the device. As the device dimensions are diminishing and moving to high-k oxide materials, it is essential to maintain the linearity and reliability of the devices with varying manufacturing and environmental conditions. Therefore, this paper investigates the impact of variation in the material used for the oxide region. The effect is analyzed on analog/RF, structural, and linearity parameters. In this manuscript, the oxide materials are varied, including Al2O3, SiO2, HfO2, Si3N4, and ZnO2. The proposed device achieves higher ON-current and steeper characteristics, a vertical nanowire TFET with high-k oxide (HKO-VNW-TFET) as the oxide material. Due to its high transconductance and cut-off frequency, the device's suitability for analog applications has been verified by simulated RF analysis results. In addition, linearity analysis is performed in terms of several FOMs, such as higher-order gm, third-order intermodulation distortion (IMD3), second-order voltage intercept point (VIP2), third-order input intercept point (IIP3), and third-order voltage intercept point (VIP3). This manuscript aims to benefit the semiconductor industry by finding the effect of various oxides and to get a new opportunity by making highly reliable devices using high-k oxide material in devices. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 185136231 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Study of Oxide Material Variation on Electrical Characteristics and Linearity Parameters Induced in Vertical Nanowire TFET. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Bhardwaj%2C+Anjana%22">Bhardwaj, Anjana</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Das%2C+Amit%22">Das, Amit</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> amitofficial7492@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Rai%2C+Amrita%22">Rai, Amrita</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Krishna%2C+Ram%22">Krishna, Ram</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Upadhyay%2C+A%2E+K%2E%22">Upadhyay, A. K.</searchLink><relatesTo>4</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. May2025, Vol. 59 Issue 5, p474-482. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Tunnel+field-effect+transistors%22">Tunnel field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Intermodulation+distortion%22">Intermodulation distortion</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+industry%22">Semiconductor industry</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum+oxide%22">Aluminum oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Oxides%22">Oxides</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The oxide material in a tunnel FET (TFET) plays an important role in the electrical characteristics of the device. As the device dimensions are diminishing and moving to high-k oxide materials, it is essential to maintain the linearity and reliability of the devices with varying manufacturing and environmental conditions. Therefore, this paper investigates the impact of variation in the material used for the oxide region. The effect is analyzed on analog/RF, structural, and linearity parameters. In this manuscript, the oxide materials are varied, including Al2O3, SiO2, HfO2, Si3N4, and ZnO2. The proposed device achieves higher ON-current and steeper characteristics, a vertical nanowire TFET with high-k oxide (HKO-VNW-TFET) as the oxide material. Due to its high transconductance and cut-off frequency, the device's suitability for analog applications has been verified by simulated RF analysis results. In addition, linearity analysis is performed in terms of several FOMs, such as higher-order gm, third-order intermodulation distortion (IMD3), second-order voltage intercept point (VIP2), third-order input intercept point (IIP3), and third-order voltage intercept point (VIP3). This manuscript aims to benefit the semiconductor industry by finding the effect of various oxides and to get a new opportunity by making highly reliable devices using high-k oxide material in devices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S1063782625600494 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 474 Subjects: – SubjectFull: Tunnel field-effect transistors Type: general – SubjectFull: Intermodulation distortion Type: general – SubjectFull: Semiconductor industry Type: general – SubjectFull: Aluminum oxide Type: general – SubjectFull: Oxides Type: general Titles: – TitleFull: Study of Oxide Material Variation on Electrical Characteristics and Linearity Parameters Induced in Vertical Nanowire TFET. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Bhardwaj, Anjana – PersonEntity: Name: NameFull: Das, Amit – PersonEntity: Name: NameFull: Rai, Amrita – PersonEntity: Name: NameFull: Krishna, Ram – PersonEntity: Name: NameFull: Upadhyay, A. K. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 10637826 Numbering: – Type: volume Value: 59 – Type: issue Value: 5 Titles: – TitleFull: Semiconductors Type: main |
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