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Siv color center concentration enhancement by rapid thermal annealing of Si-doped MPCVD diamonds.

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Title: Siv color center concentration enhancement by rapid thermal annealing of Si-doped MPCVD diamonds.
Authors: Chen, Yuan1 (AUTHOR), Tao, Tao1 (AUTHOR) ttao@nju.edu.cn, Yu, Haoxuan1 (AUTHOR), Zheng, Kaiwen1 (AUTHOR), Zhi, Ting2 (AUTHOR), Wang, Xiwei3 (AUTHOR) wangxiwei@sdu.edu.cn, Ren, Fangfang1 (AUTHOR), Yan, Yu1 (AUTHOR), Xu, Qiang4 (AUTHOR), Song, Zhihai4 (AUTHOR), Liu, Bin1 (AUTHOR)
Source: Applied Physics A: Materials Science & Processing. May2025, Vol. 131 Issue 5, p1-6. 6p.
Subjects: Rapid thermal processing, Energy levels (Quantum mechanics), Chemical vapor deposition, Avalanche diodes, Microwave plasmas
Abstract: Diamond, as an ultra-wide bandgap semiconductor material, exhibits promising properties including strong mechanical stability, fast thermal conductivity, strong radiation resistance and broad-spectrum transmittance. Notably, deep-level defects within the diamond introduce defect-induced energy levels known as color centers. The fluorescence emission from color centers has strong monochromaticity, wavelength stability, and thermal stability, making them great potential for applications in quantum information processing, optical sensing, and biological labeling. Among these, the silicon-vacancy (Siv) color center, characterized by a zero-phonon-line at 738 nm, demonstrates a short excited-state lifetime (1 − 4 ns) and a narrow zero-phonon-line width (≈5 nm) at room temperature, underscoring its superior performance and potential applications. This study investigates the luminescence properties of Siv color centers in silicon-doped single-crystal diamond grown via the microwave plasma chemical vapor deposition (MPCVD) method. Measurements of fluorescence luminescence intensity of Siv color centers were conducted using PL, point-by-point scanning of specific areas to form a mapping image to determine the location of Siv color centers. A strong correlation is established between the distribution of Siv color centers and the surface structural defects existing in the diamond material. The results may support for subsequent research on diamond Siv color-centered single-photon devices such as single-photon detectors, single-photon avalanche diodes. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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An: 185237727
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Siv color center concentration enhancement by rapid thermal annealing of Si-doped MPCVD diamonds.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Chen%2C+Yuan%22">Chen, Yuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tao%2C+Tao%22">Tao, Tao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> ttao@nju.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Yu%2C+Haoxuan%22">Yu, Haoxuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zheng%2C+Kaiwen%22">Zheng, Kaiwen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhi%2C+Ting%22">Zhi, Ting</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Xiwei%22">Wang, Xiwei</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> wangxiwei@sdu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Ren%2C+Fangfang%22">Ren, Fangfang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yan%2C+Yu%22">Yan, Yu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Qiang%22">Xu, Qiang</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Song%2C+Zhihai%22">Song, Zhihai</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Bin%22">Liu, Bin</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. May2025, Vol. 131 Issue 5, p1-6. 6p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Rapid+thermal+processing%22">Rapid thermal processing</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+levels+%28Quantum+mechanics%29%22">Energy levels (Quantum mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Avalanche+diodes%22">Avalanche diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Microwave+plasmas%22">Microwave plasmas</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Diamond, as an ultra-wide bandgap semiconductor material, exhibits promising properties including strong mechanical stability, fast thermal conductivity, strong radiation resistance and broad-spectrum transmittance. Notably, deep-level defects within the diamond introduce defect-induced energy levels known as color centers. The fluorescence emission from color centers has strong monochromaticity, wavelength stability, and thermal stability, making them great potential for applications in quantum information processing, optical sensing, and biological labeling. Among these, the silicon-vacancy (Siv) color center, characterized by a zero-phonon-line at 738 nm, demonstrates a short excited-state lifetime (1 − 4 ns) and a narrow zero-phonon-line width (≈5 nm) at room temperature, underscoring its superior performance and potential applications. This study investigates the luminescence properties of Siv color centers in silicon-doped single-crystal diamond grown via the microwave plasma chemical vapor deposition (MPCVD) method. Measurements of fluorescence luminescence intensity of Siv color centers were conducted using PL, point-by-point scanning of specific areas to form a mapping image to determine the location of Siv color centers. A strong correlation is established between the distribution of Siv color centers and the surface structural defects existing in the diamond material. The results may support for subsequent research on diamond Siv color-centered single-photon devices such as single-photon detectors, single-photon avalanche diodes. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s00339-025-08488-w
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1
    Subjects:
      – SubjectFull: Rapid thermal processing
        Type: general
      – SubjectFull: Energy levels (Quantum mechanics)
        Type: general
      – SubjectFull: Chemical vapor deposition
        Type: general
      – SubjectFull: Avalanche diodes
        Type: general
      – SubjectFull: Microwave plasmas
        Type: general
    Titles:
      – TitleFull: Siv color center concentration enhancement by rapid thermal annealing of Si-doped MPCVD diamonds.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Chen, Yuan
      – PersonEntity:
          Name:
            NameFull: Tao, Tao
      – PersonEntity:
          Name:
            NameFull: Yu, Haoxuan
      – PersonEntity:
          Name:
            NameFull: Zheng, Kaiwen
      – PersonEntity:
          Name:
            NameFull: Zhi, Ting
      – PersonEntity:
          Name:
            NameFull: Wang, Xiwei
      – PersonEntity:
          Name:
            NameFull: Ren, Fangfang
      – PersonEntity:
          Name:
            NameFull: Yan, Yu
      – PersonEntity:
          Name:
            NameFull: Xu, Qiang
      – PersonEntity:
          Name:
            NameFull: Song, Zhihai
      – PersonEntity:
          Name:
            NameFull: Liu, Bin
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 05
              Text: May2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 09478396
          Numbering:
            – Type: volume
              Value: 131
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Applied Physics A: Materials Science & Processing
              Type: main
ResultId 1