Spray-Pyrolyzed Tin Disulfide (SnS2) Thin Film: A Promising Approach for both Visible and UV Detection Applications.
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| Title: | Spray-Pyrolyzed Tin Disulfide (SnS |
|---|---|
| Authors: | Louhichi, M.1 (AUTHOR), Souissi, R.2 (AUTHOR), Alaya, A.1 (AUTHOR), Toumi, M.1 (AUTHOR), Tiss, B.1 (AUTHOR) btiss@fisica.uminho.pt, Amara, A. Ben Haj3 (AUTHOR), Bouguila, N.1 (AUTHOR), Alaya, S.1 (AUTHOR) |
| Source: | Journal of Electronic Materials. Jul2025, Vol. 54 Issue 7, p5709-5722. 14p. |
| Subjects: | Physical & theoretical chemistry, Physical sciences, Substrates (Materials science), Analytical chemistry, Near infrared spectroscopy, Optoelectronic devices |
| Abstract: | In the past decade, tin disulfide (SnS2) has gained significant attention due to its diverse applications, including solar cells, optoelectronic devices, and UV photodetectors. In this study, SnS2 thin films were deposited on glass substrates via spray pyrolysis with 300°C as the substrate temperature. This work investigates the physical properties and photoconductive response of the obtained film. X-ray diffraction revealed a hexagonal polycrystalline structure with an average crystallite size of approximately 15 nm. Morphological study revealed that the film surface appears irregular, with significant porosity, with a grain size around 10 μm. Chemical analysis via energy-dispersive spectroscopy confirmed the presence of both tin and sulfur with an atomic ratio close to 0.73. UV-visible and NIR spectroscopy measurements indicated that the optical transmittance exceeded 75% in the visible and near-IR regions, with a band gap of 3.18 eV and a refractive index of 2.6, making the films suitable for solar cell applications. Additionally, photoconductivity studies showed that photocurrent versus light intensity follows a power law, while polarization follows a linear trend. The responsivity ranged from 0.005 μAW−1 cm−2 under white light to 0.76 μAW−1 cm−2 under UV illumination, with detectivity increasing from 2 106 to 2.14 108 johns. These findings suggest that SnS2 layers are promising candidates for UV photodetectors. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 185782343 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Spray-Pyrolyzed Tin Disulfide (SnS<subscript>2</subscript>) Thin Film: A Promising Approach for both Visible and UV Detection Applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Louhichi%2C+M%2E%22">Louhichi, M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Souissi%2C+R%2E%22">Souissi, R.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alaya%2C+A%2E%22">Alaya, A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Toumi%2C+M%2E%22">Toumi, M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tiss%2C+B%2E%22">Tiss, B.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> btiss@fisica.uminho.pt</i><br /><searchLink fieldCode="AR" term="%22Amara%2C+A%2E+Ben+Haj%22">Amara, A. Ben Haj</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bouguila%2C+N%2E%22">Bouguila, N.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alaya%2C+S%2E%22">Alaya, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Jul2025, Vol. 54 Issue 7, p5709-5722. 14p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Physical+%26+theoretical+chemistry%22">Physical & theoretical chemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Physical+sciences%22">Physical sciences</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Analytical+chemistry%22">Analytical chemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Near+infrared+spectroscopy%22">Near infrared spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronic+devices%22">Optoelectronic devices</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In the past decade, tin disulfide (SnS2) has gained significant attention due to its diverse applications, including solar cells, optoelectronic devices, and UV photodetectors. In this study, SnS2 thin films were deposited on glass substrates via spray pyrolysis with 300°C as the substrate temperature. This work investigates the physical properties and photoconductive response of the obtained film. X-ray diffraction revealed a hexagonal polycrystalline structure with an average crystallite size of approximately 15 nm. Morphological study revealed that the film surface appears irregular, with significant porosity, with a grain size around 10 μm. Chemical analysis via energy-dispersive spectroscopy confirmed the presence of both tin and sulfur with an atomic ratio close to 0.73. UV-visible and NIR spectroscopy measurements indicated that the optical transmittance exceeded 75% in the visible and near-IR regions, with a band gap of 3.18 eV and a refractive index of 2.6, making the films suitable for solar cell applications. Additionally, photoconductivity studies showed that photocurrent versus light intensity follows a power law, while polarization follows a linear trend. The responsivity ranged from 0.005 μAW−1 cm−2 under white light to 0.76 μAW−1 cm−2 under UV illumination, with detectivity increasing from 2 106 to 2.14 108 johns. These findings suggest that SnS2 layers are promising candidates for UV photodetectors. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-025-11978-5 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 14 StartPage: 5709 Subjects: – SubjectFull: Physical & theoretical chemistry Type: general – SubjectFull: Physical sciences Type: general – SubjectFull: Substrates (Materials science) Type: general – SubjectFull: Analytical chemistry Type: general – SubjectFull: Near infrared spectroscopy Type: general – SubjectFull: Optoelectronic devices Type: general Titles: – TitleFull: Spray-Pyrolyzed Tin Disulfide (SnS2) Thin Film: A Promising Approach for both Visible and UV Detection Applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Louhichi, M. – PersonEntity: Name: NameFull: Souissi, R. – PersonEntity: Name: NameFull: Alaya, A. – PersonEntity: Name: NameFull: Toumi, M. – PersonEntity: Name: NameFull: Tiss, B. – PersonEntity: Name: NameFull: Amara, A. Ben Haj – PersonEntity: Name: NameFull: Bouguila, N. – PersonEntity: Name: NameFull: Alaya, S. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 54 – Type: issue Value: 7 Titles: – TitleFull: Journal of Electronic Materials Type: main |
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