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Zirconium-doping improved resistive switching characteristics of cobalt oxide resistive random access memory devices.

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Title: Zirconium-doping improved resistive switching characteristics of cobalt oxide resistive random access memory devices.
Authors: Liao, Qi1 (AUTHOR), Du, Ling1 (AUTHOR), Qin, Ni1 (AUTHOR), Lou, Zhuoyang1 (AUTHOR), Bao, Dinghua1 (AUTHOR) stsbdh@mail.sysu.edu.cn
Source: Journal of Materials Science: Materials in Electronics. Jun2025, Vol. 36 Issue 18, p1-12. 12p.
Subjects: Nonvolatile random-access memory, Chemical solution deposition, Oxygen vacancy, Thin films, Cobalt oxides
Abstract: The Zr-doped Co3O4 films were prepared using chemical solution deposition method, and the influence of Zr doping content on the resistive switching performance of spinel Co3O4 films was investigated. The Pt/Zr0.05Co2.95O4/Pt (Pt/5ZCO/Pt) device exhibits typical bipolar resistive switching behavior, with the formation voltage and the set and reset voltage distributions being the most concentrated among all the devices tested. Additionally, superior retention performance and long cycling lifetime were demonstrated. The enhancement in the resistive switching properties can be attributed to the improved distribution of oxygen vacancies within the films due to Zr-doping, which reduces the randomness in the rupture and formation of conductive filaments. Regardless of whether at room temperature or low temperature, the low resistance state of the device follows an Ohmic conduction mechanism, while the high resistance state is consistent with a Schottky emission mechanism. This study highlights the potential application of Zr-doped Co3O4 thin films in memristor technology. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Zirconium-doping improved resistive switching characteristics of cobalt oxide resistive random access memory devices.
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  Data: <searchLink fieldCode="AR" term="%22Liao%2C+Qi%22">Liao, Qi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Du%2C+Ling%22">Du, Ling</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Qin%2C+Ni%22">Qin, Ni</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lou%2C+Zhuoyang%22">Lou, Zhuoyang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bao%2C+Dinghua%22">Bao, Dinghua</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> stsbdh@mail.sysu.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jun2025, Vol. 36 Issue 18, p1-12. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Nonvolatile+random-access+memory%22">Nonvolatile random-access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+solution+deposition%22">Chemical solution deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Oxygen+vacancy%22">Oxygen vacancy</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Cobalt+oxides%22">Cobalt oxides</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The Zr-doped Co3O4 films were prepared using chemical solution deposition method, and the influence of Zr doping content on the resistive switching performance of spinel Co3O4 films was investigated. The Pt/Zr0.05Co2.95O4/Pt (Pt/5ZCO/Pt) device exhibits typical bipolar resistive switching behavior, with the formation voltage and the set and reset voltage distributions being the most concentrated among all the devices tested. Additionally, superior retention performance and long cycling lifetime were demonstrated. The enhancement in the resistive switching properties can be attributed to the improved distribution of oxygen vacancies within the films due to Zr-doping, which reduces the randomness in the rupture and formation of conductive filaments. Regardless of whether at room temperature or low temperature, the low resistance state of the device follows an Ohmic conduction mechanism, while the high resistance state is consistent with a Schottky emission mechanism. This study highlights the potential application of Zr-doped Co3O4 thin films in memristor technology. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1007/s10854-025-15180-5
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      – Code: eng
        Text: English
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      – SubjectFull: Nonvolatile random-access memory
        Type: general
      – SubjectFull: Chemical solution deposition
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      – SubjectFull: Oxygen vacancy
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Cobalt oxides
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            NameFull: Qin, Ni
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              M: 06
              Text: Jun2025
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              Y: 2025
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