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Modulating Properties of Cu2ZnSnS4 Thin Films With Broad Mg‐Doping Concentration by Sol–Gel Method.

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Title: Modulating Properties of Cu2ZnSnS4 Thin Films With Broad Mg‐Doping Concentration by Sol–Gel Method.
Authors: Wang, Qingxu1 (AUTHOR), Liu, Xiaoyi1 (AUTHOR), He, Lei1 (AUTHOR), Tu, Yuchun2 (AUTHOR), Zhao, Jiaoling3 (AUTHOR), Chen, Jiayuan1 (AUTHOR), Duan, Yaping1 (AUTHOR), Lan, Rui1 (AUTHOR), Yuan, Yanyan1 (AUTHOR) yuan.yanyan@just.edu.cn
Source: Surface & Interface Analysis: SIA. Jun2025, Vol. 57 Issue 6, p407-418. 12p.
Subjects: Fermi level, Thin films, Copper, Uniform spaces, Binding energy
Abstract: Mg‐doped Cu2ZnSnS4 films were prepared by sol–gel method with varying Mg concentration. The effects of Mg concentration on the phase structure, optical properties, and electrical properties were investigated. The incorporation of Mg did not alter the phase structure but caused a shift of diffraction peaks to larger angles and a slight reduction in the bandgap as the Mg concentration increased. Sample S3‐4% exhibited higher lattice strain, whereas sample S4‐6% presented the lowest lattice strain value of 0.63. XPS results demonstrate that the chemical valence states of the Cu, Zn, Sn, and S elements remained unchanged in the Cu2MgxZn(1‐x)SnS4 compounds. Additionally, the incorporation of Mg into Cu2ZnSnS4 induced slight negative shifts in binding energies and decreased the energy difference between the valence band and the Fermi level, while also enhancing crystallization, resulting in more uniform and compact structure. Furthermore, sample S2‐2% exhibited a significant enhancement of absorption value and electrical properties. [ABSTRACT FROM AUTHOR]
Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Modulating Properties of Cu<subscript>2</subscript>ZnSnS<subscript>4</subscript> Thin Films With Broad Mg‐Doping Concentration by Sol–Gel Method.
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  Data: <searchLink fieldCode="AR" term="%22Wang%2C+Qingxu%22">Wang, Qingxu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Xiaoyi%22">Liu, Xiaoyi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22He%2C+Lei%22">He, Lei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tu%2C+Yuchun%22">Tu, Yuchun</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhao%2C+Jiaoling%22">Zhao, Jiaoling</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Jiayuan%22">Chen, Jiayuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Duan%2C+Yaping%22">Duan, Yaping</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lan%2C+Rui%22">Lan, Rui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yuan%2C+Yanyan%22">Yuan, Yanyan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> yuan.yanyan@just.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Surface+%26+Interface+Analysis%3A+SIA%22">Surface & Interface Analysis: SIA</searchLink>. Jun2025, Vol. 57 Issue 6, p407-418. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Fermi+level%22">Fermi level</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Copper%22">Copper</searchLink><br /><searchLink fieldCode="DE" term="%22Uniform+spaces%22">Uniform spaces</searchLink><br /><searchLink fieldCode="DE" term="%22Binding+energy%22">Binding energy</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Mg‐doped Cu2ZnSnS4 films were prepared by sol–gel method with varying Mg concentration. The effects of Mg concentration on the phase structure, optical properties, and electrical properties were investigated. The incorporation of Mg did not alter the phase structure but caused a shift of diffraction peaks to larger angles and a slight reduction in the bandgap as the Mg concentration increased. Sample S3‐4% exhibited higher lattice strain, whereas sample S4‐6% presented the lowest lattice strain value of 0.63. XPS results demonstrate that the chemical valence states of the Cu, Zn, Sn, and S elements remained unchanged in the Cu2MgxZn(1‐x)SnS4 compounds. Additionally, the incorporation of Mg into Cu2ZnSnS4 induced slight negative shifts in binding energies and decreased the energy difference between the valence band and the Fermi level, while also enhancing crystallization, resulting in more uniform and compact structure. Furthermore, sample S2‐2% exhibited a significant enhancement of absorption value and electrical properties. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1002/sia.7395
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 12
        StartPage: 407
    Subjects:
      – SubjectFull: Fermi level
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Copper
        Type: general
      – SubjectFull: Uniform spaces
        Type: general
      – SubjectFull: Binding energy
        Type: general
    Titles:
      – TitleFull: Modulating Properties of Cu2ZnSnS4 Thin Films With Broad Mg‐Doping Concentration by Sol–Gel Method.
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          Name:
            NameFull: Wang, Qingxu
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            NameFull: Liu, Xiaoyi
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            NameFull: He, Lei
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            NameFull: Tu, Yuchun
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            NameFull: Zhao, Jiaoling
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            NameFull: Chen, Jiayuan
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            NameFull: Duan, Yaping
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            NameFull: Lan, Rui
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            NameFull: Yuan, Yanyan
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          Dates:
            – D: 01
              M: 06
              Text: Jun2025
              Type: published
              Y: 2025
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              Value: 01422421
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              Value: 57
            – Type: issue
              Value: 6
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            – TitleFull: Surface & Interface Analysis: SIA
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