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Structural and optical properties of (AlxGa1-x)2O3 (2¯01) epitaxial films grown on sapphire substrates by MOCVD.

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Title: Structural and optical properties of (AlxGa1-x)2O3 (2¯01) epitaxial films grown on sapphire substrates by MOCVD.
Authors: Wang, Di1 (AUTHOR), Kong, Xiangcan1 (AUTHOR), Chen, Rongrong1 (AUTHOR) 2476880811@qq.com, Zhu, Hongyan2 (AUTHOR), Han, Xinyu2 (AUTHOR), Wang, Yuankang2 (AUTHOR), Zhou, Hao2 (AUTHOR), Luan, Caina2 (AUTHOR), Ma, Jin2 (AUTHOR), Xiao, Hongdi2 (AUTHOR) hdxiao@sdu.edu.cn
Source: Journal of Materials Science: Materials in Electronics. Jun2025, Vol. 36 Issue 18, p1-11. 11p.
Abstract: In this work, β-(AlxGa1-x)2O3 ( 2 ¯ 01 ) epitaxial films were deposited on c-plane sapphire substrates, successfully. XRD scanning results illustrates that the prepared films maintain the crystal structure of β-Ga2O3 in a “x” value range of 0–0.45, and the crystalline quality gradually deteriorates with the increase of Al content. It is wonder that the optical bandgap does not monotonically increase with the increase of Al content, and reaches a maximum value of ~ 5.11 eV when the x value is 0.29. Further increasing x value leads to decrease of optical bandgap, which should be contributed to the enhanced absorption of defective energy levels caused by the deterioration of lattice quality. The refractive index of the prepared films under 400-nm-light can be adjusted between 1.99 and 1.88 by various Al contents. Such a refractive index difference between Ga2O3 and (AlxGa1-x)2O3 indicates that the Ga2O3/(AlxGa1-x)2O3 periodic structure is promising for the preparation of distributed Bragg reflector. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Structural and optical properties of (Al<subscript>x</subscript>Ga<subscript>1-x</subscript>)<subscript>2</subscript>O<subscript>3</subscript> (2¯01) epitaxial films grown on sapphire substrates by MOCVD.
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  Data: <searchLink fieldCode="AR" term="%22Wang%2C+Di%22">Wang, Di</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kong%2C+Xiangcan%22">Kong, Xiangcan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Rongrong%22">Chen, Rongrong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> 2476880811@qq.com</i><br /><searchLink fieldCode="AR" term="%22Zhu%2C+Hongyan%22">Zhu, Hongyan</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Han%2C+Xinyu%22">Han, Xinyu</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Yuankang%22">Wang, Yuankang</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Hao%22">Zhou, Hao</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Luan%2C+Caina%22">Luan, Caina</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ma%2C+Jin%22">Ma, Jin</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xiao%2C+Hongdi%22">Xiao, Hongdi</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> hdxiao@sdu.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jun2025, Vol. 36 Issue 18, p1-11. 11p.
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this work, β-(AlxGa1-x)2O3 ( 2 ¯ 01 ) epitaxial films were deposited on c-plane sapphire substrates, successfully. XRD scanning results illustrates that the prepared films maintain the crystal structure of β-Ga2O3 in a “x” value range of 0–0.45, and the crystalline quality gradually deteriorates with the increase of Al content. It is wonder that the optical bandgap does not monotonically increase with the increase of Al content, and reaches a maximum value of ~ 5.11 eV when the x value is 0.29. Further increasing x value leads to decrease of optical bandgap, which should be contributed to the enhanced absorption of defective energy levels caused by the deterioration of lattice quality. The refractive index of the prepared films under 400-nm-light can be adjusted between 1.99 and 1.88 by various Al contents. Such a refractive index difference between Ga2O3 and (AlxGa1-x)2O3 indicates that the Ga2O3/(AlxGa1-x)2O3 periodic structure is promising for the preparation of distributed Bragg reflector. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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              Text: Jun2025
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