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High-Performance and Fabrication-Tolerant 3 dB Adiabatic Coupler Based on Ultralow-Loss Silicon Waveguide by Tri-Layer Hard Mask Etching Process.

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Title: High-Performance and Fabrication-Tolerant 3 dB Adiabatic Coupler Based on Ultralow-Loss Silicon Waveguide by Tri-Layer Hard Mask Etching Process.
Authors: Zhang, Ke1,2 (AUTHOR), Yu, Yunchu2 (AUTHOR), Zhu, Nanfei1,2 (AUTHOR), Zhang, Senlin2 (AUTHOR), Sun, Jie2 (AUTHOR), Ding, Shijin1 (AUTHOR), Zhang, David Wei1 (AUTHOR)
Source: Nanomaterials (2079-4991). Jun2025, Vol. 15 Issue 12, p947. 11p.
Subjects: Optical quantum computing, Directional couplers, Integrated circuits, Computer systems, Etching
Abstract: Silicon photonics has emerged as critical for advancing photonic integrated circuits (PICs), but waveguide losses, primarily resulting from sidewall roughness, remain a primary challenge. In this work, we demonstrate a tri-layer hard mask etching process that produces strip silicon waveguides with propagation losses as low as 1.48 dB/cm, i.e., a 37% improvement over the conventional Si3N4 hard mask technique. Based on the abovementioned approach, the fabricated 3 dB adiabatic directional couplers achieve a nearly ideal splitting ratio of 50.2:49.8 as well as an excess loss of 0.067 dB. These results indicate that the tri-layer hard mask etching process enables scalable and ultralow-loss PICs to be fabricated for high-speed optical interconnects and quantum computing systems. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: High-Performance and Fabrication-Tolerant 3 dB Adiabatic Coupler Based on Ultralow-Loss Silicon Waveguide by Tri-Layer Hard Mask Etching Process.
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  Data: <searchLink fieldCode="AR" term="%22Zhang%2C+Ke%22">Zhang, Ke</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yu%2C+Yunchu%22">Yu, Yunchu</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhu%2C+Nanfei%22">Zhu, Nanfei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Senlin%22">Zhang, Senlin</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Jie%22">Sun, Jie</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ding%2C+Shijin%22">Ding, Shijin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+David+Wei%22">Zhang, David Wei</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Jun2025, Vol. 15 Issue 12, p947. 11p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Optical+quantum+computing%22">Optical quantum computing</searchLink><br /><searchLink fieldCode="DE" term="%22Directional+couplers%22">Directional couplers</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+circuits%22">Integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+systems%22">Computer systems</searchLink><br /><searchLink fieldCode="DE" term="%22Etching%22">Etching</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Silicon photonics has emerged as critical for advancing photonic integrated circuits (PICs), but waveguide losses, primarily resulting from sidewall roughness, remain a primary challenge. In this work, we demonstrate a tri-layer hard mask etching process that produces strip silicon waveguides with propagation losses as low as 1.48 dB/cm, i.e., a 37% improvement over the conventional Si3N4 hard mask technique. Based on the abovementioned approach, the fabricated 3 dB adiabatic directional couplers achieve a nearly ideal splitting ratio of 50.2:49.8 as well as an excess loss of 0.067 dB. These results indicate that the tri-layer hard mask etching process enables scalable and ultralow-loss PICs to be fabricated for high-speed optical interconnects and quantum computing systems. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano15120947
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        Text: English
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      – SubjectFull: Optical quantum computing
        Type: general
      – SubjectFull: Directional couplers
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      – SubjectFull: Integrated circuits
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              Text: Jun2025
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