Characterization of CuO‐Doped SnO2 Thin Films Prepared by Sol–Gel and Dip‐Coating: A Multi‐Analytical Approach.

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Title: Characterization of CuO‐Doped SnO2 Thin Films Prepared by Sol–Gel and Dip‐Coating: A Multi‐Analytical Approach.
Authors: Poiasina, M. P.1 (AUTHOR), Bianchetti, M. F.1 (AUTHOR), Bojorge, C. D.1 (AUTHOR), Gard, F. S.2 (AUTHOR) fsgard01@gmail.com
Source: Surface & Interface Analysis: SIA. Aug2025, Vol. 57 Issue 8, p600-618. 19p.
Subjects: Electron backscattering, Photoelectron spectroscopy, Thin films, X-ray diffraction, Copper films
Abstract: In the current work, we comprehensively studied focus‐doped (5%) SnO2 thin films, using scanning electron microscopy (SEM), X‐ray diffraction (XRD), and X‐ray photoemission spectroscopy (XPS). The films were synthesized via a sol–gel process followed by a dip‐coating deposition technique to form three‐layered structures. To understand the impact of annealing on the properties of the films, we analyzed samples both without annealing and with annealing at 400°C. Electron backscattering (BS) images revealed distinct differences in surface structures between annealed and non‐annealed films. The annealed films exhibited a more uniform and smooth surface with fewer defects, while the non‐annealed films showed a network of cracks and delaminations. XRD analysis of the annealed films indicated the formation of SnO2 nanoparticles with an average size of 9 ± 1 nm, verifying the crystallinity and nanometric size of the material with heat treatment. XPS depth profiling demonstrated the presence of a metallic tin (Sn0) layer at the interface of the films. The surface tin film was in mixed oxidation states, involving both Sn4+ and Sn2+. Additionally, the copper within the films was found to exist as Cu2+ and Cu+. [ABSTRACT FROM AUTHOR]
Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="JN" term="%22Surface+%26+Interface+Analysis%3A+SIA%22">Surface & Interface Analysis: SIA</searchLink>. Aug2025, Vol. 57 Issue 8, p600-618. 19p.
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  Data: <searchLink fieldCode="DE" term="%22Electron+backscattering%22">Electron backscattering</searchLink><br /><searchLink fieldCode="DE" term="%22Photoelectron+spectroscopy%22">Photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+diffraction%22">X-ray diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Copper+films%22">Copper films</searchLink>
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  Data: In the current work, we comprehensively studied focus‐doped (5%) SnO2 thin films, using scanning electron microscopy (SEM), X‐ray diffraction (XRD), and X‐ray photoemission spectroscopy (XPS). The films were synthesized via a sol–gel process followed by a dip‐coating deposition technique to form three‐layered structures. To understand the impact of annealing on the properties of the films, we analyzed samples both without annealing and with annealing at 400°C. Electron backscattering (BS) images revealed distinct differences in surface structures between annealed and non‐annealed films. The annealed films exhibited a more uniform and smooth surface with fewer defects, while the non‐annealed films showed a network of cracks and delaminations. XRD analysis of the annealed films indicated the formation of SnO2 nanoparticles with an average size of 9 ± 1 nm, verifying the crystallinity and nanometric size of the material with heat treatment. XPS depth profiling demonstrated the presence of a metallic tin (Sn0) layer at the interface of the films. The surface tin film was in mixed oxidation states, involving both Sn4+ and Sn2+. Additionally, the copper within the films was found to exist as Cu2+ and Cu+. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1002/sia.7418
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      – Code: eng
        Text: English
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        PageCount: 19
        StartPage: 600
    Subjects:
      – SubjectFull: Electron backscattering
        Type: general
      – SubjectFull: Photoelectron spectroscopy
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: X-ray diffraction
        Type: general
      – SubjectFull: Copper films
        Type: general
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      – TitleFull: Characterization of CuO‐Doped SnO2 Thin Films Prepared by Sol–Gel and Dip‐Coating: A Multi‐Analytical Approach.
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            NameFull: Poiasina, M. P.
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            NameFull: Bojorge, C. D.
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              M: 08
              Text: Aug2025
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              Y: 2025
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