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A design for high thermally conductive and electrically semiconducting graphene-based hybrid structures.

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Title: A design for high thermally conductive and electrically semiconducting graphene-based hybrid structures.
Authors: Gong, L. J.1 (AUTHOR), Shi, H. L.2 (AUTHOR) hlshidtdx@163.com, Yang, J.3 (AUTHOR) jieyang-ip@hotmail.com, Han, Q. Z.4 (AUTHOR), Yang, H.1 (AUTHOR), Liu, Q. H.1 (AUTHOR), Jiang, Z. T.1 (AUTHOR) jiangzhaotan@bit.edu.cn
Source: Modern Physics Letters B. 10/30/2025, Vol. 39 Issue 30, p1-11. 11p.
Subjects: Hybrid materials, Molecular dynamics, Thermal conductivity, Electronic equipment, Electronic materials
Abstract: The semimetal characteristic of graphene seriously obstructs its extensive application as a heat-dissipation material in electronic devices. Therefore, it should be urgent to design semiconducting graphene-based structures of high thermal conductivity (TC). In this paper, we construct the hybrid structures composed of graphene and other carbon-based monolayers such as BC3, C3N, and BC6N. It is shown that the hybrid structures may be kept to be semiconducting while their TCs will be increased with the increasing of the graphene zone width. By comparing the TCs of the hybrid structures affiliated with the side comb-type and plane-type structures, we find that the side plane-type structures can enhance the TCs more strongly than the comb-type ones. A further study on the isotope doping shows that the isotope doping in the side structures may induce the increasing of TC. This research provides an important reference for designing the semiconducting and high-TC graphene-based hybrid materials. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The semimetal characteristic of graphene seriously obstructs its extensive application as a heat-dissipation material in electronic devices. Therefore, it should be urgent to design semiconducting graphene-based structures of high thermal conductivity (TC). In this paper, we construct the hybrid structures composed of graphene and other carbon-based monolayers such as BC3, C3N, and BC6N. It is shown that the hybrid structures may be kept to be semiconducting while their TCs will be increased with the increasing of the graphene zone width. By comparing the TCs of the hybrid structures affiliated with the side comb-type and plane-type structures, we find that the side plane-type structures can enhance the TCs more strongly than the comb-type ones. A further study on the isotope doping shows that the isotope doping in the side structures may induce the increasing of TC. This research provides an important reference for designing the semiconducting and high-TC graphene-based hybrid materials. [ABSTRACT FROM AUTHOR]
ISSN:02179849
DOI:10.1142/S0217984925501805