Interfacial Behavior of Nb-Doped Ti-Al-Based Barrier Layer n-Type Skutterudite Thermoelectric Joints.
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| Title: | Interfacial Behavior of Nb-Doped Ti-Al-Based Barrier Layer n-Type Skutterudite Thermoelectric Joints. |
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| Authors: | Zuo, Tong1 (AUTHOR), Li, Xin1 (AUTHOR), Tang, Xian1 (AUTHOR) tangxian79@sohu.com |
| Source: | Journal of Electronic Materials. Aug2025, Vol. 54 Issue 8, p6275-6284. 10p. |
| Subjects: | Thermoelectric apparatus & appliances, Diffusion barriers, Skutterudite, Space exploration, Interfacial resistance |
| Abstract: | Isotope power systems are a key technology for solving the energy bottleneck of deep space exploration, and these thermoelectric (TE) components play an important role in determining the reliability of isotope power systems. TE devices are usually required to provide long-term stable service in high-temperature environments, which can lead to a decrease in the interfacial stability of the device and result in the degradation of the output performance of the isotope power systems. For skutterudite (SKD)-based TE devices, Ti-Al is widely used as the barrier layer joining the SKD and the electrode. To address the problem of increasing contact resistance and decreasing interfacial stability due to the difference in thermal expansion coefficients between TE materials and diffusion-resistant barrier layers in TE devices, in this work we investigated the effect of adding Nb metal on the interfacial stability of n-type TE joints using Ti-Al alloy as the barrier layer. We found that the initial contact resistivity of the Ti-Al-based barrier layer decreased from 5.21 to 3.24 μ Ω cm2 with increasing Nb percentage, demonstrating a decreasing trend. Cu/Ag-Cu/Ti-Al-Nb/n-SKD TE joints with good performance and 10 at.% Nb Ti-Al-Nb as the barrier layer were prepared, and the interfacial resistivity reached 10.23 μ Ω cm2 after aging testing for 384 h. This assessment provided technical support to address the issue of high attenuation rates of high-power isotope power systems. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 186470092 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Interfacial Behavior of Nb-Doped Ti-Al-Based Barrier Layer n-Type Skutterudite Thermoelectric Joints. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Zuo%2C+Tong%22">Zuo, Tong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Xin%22">Li, Xin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tang%2C+Xian%22">Tang, Xian</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> tangxian79@sohu.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Aug2025, Vol. 54 Issue 8, p6275-6284. 10p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thermoelectric+apparatus+%26+appliances%22">Thermoelectric apparatus & appliances</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion+barriers%22">Diffusion barriers</searchLink><br /><searchLink fieldCode="DE" term="%22Skutterudite%22">Skutterudite</searchLink><br /><searchLink fieldCode="DE" term="%22Space+exploration%22">Space exploration</searchLink><br /><searchLink fieldCode="DE" term="%22Interfacial+resistance%22">Interfacial resistance</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Isotope power systems are a key technology for solving the energy bottleneck of deep space exploration, and these thermoelectric (TE) components play an important role in determining the reliability of isotope power systems. TE devices are usually required to provide long-term stable service in high-temperature environments, which can lead to a decrease in the interfacial stability of the device and result in the degradation of the output performance of the isotope power systems. For skutterudite (SKD)-based TE devices, Ti-Al is widely used as the barrier layer joining the SKD and the electrode. To address the problem of increasing contact resistance and decreasing interfacial stability due to the difference in thermal expansion coefficients between TE materials and diffusion-resistant barrier layers in TE devices, in this work we investigated the effect of adding Nb metal on the interfacial stability of n-type TE joints using Ti-Al alloy as the barrier layer. We found that the initial contact resistivity of the Ti-Al-based barrier layer decreased from 5.21 to 3.24 μ Ω cm2 with increasing Nb percentage, demonstrating a decreasing trend. Cu/Ag-Cu/Ti-Al-Nb/n-SKD TE joints with good performance and 10 at.% Nb Ti-Al-Nb as the barrier layer were prepared, and the interfacial resistivity reached 10.23 μ Ω cm2 after aging testing for 384 h. This assessment provided technical support to address the issue of high attenuation rates of high-power isotope power systems. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-025-11941-4 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 6275 Subjects: – SubjectFull: Thermoelectric apparatus & appliances Type: general – SubjectFull: Diffusion barriers Type: general – SubjectFull: Skutterudite Type: general – SubjectFull: Space exploration Type: general – SubjectFull: Interfacial resistance Type: general Titles: – TitleFull: Interfacial Behavior of Nb-Doped Ti-Al-Based Barrier Layer n-Type Skutterudite Thermoelectric Joints. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zuo, Tong – PersonEntity: Name: NameFull: Li, Xin – PersonEntity: Name: NameFull: Tang, Xian IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 54 – Type: issue Value: 8 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |
