Characterization of new quaternary SnxGe3S6Ag1−x ([formula omitted]) chalcogenide glasses for photovoltaic applications.
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| Title: | Characterization of new quaternary SnxGe3S6Ag1−x ([formula omitted]) chalcogenide glasses for photovoltaic applications. |
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| Authors: | Mohamed, Mansour1 (AUTHOR) mansour.m@uoh.edu.sa, Al-Rasheedi, Asmaa2 (AUTHOR), Bouzidi, M.1 (AUTHOR), Khan, Z.R.1 (AUTHOR), Aly, K.A.2,3 (AUTHOR) kaali5@uj.edu.sa |
| Source: | Inorganic Chemistry Communications. Sep2025:Part 1, Vol. 179, pN.PAG-N.PAG. 1p. |
| Subjects: | Photocurrents, Chalcogenide glass, Optoelectronic devices, Solar technology, Solar cells |
| Abstract: | [Display omitted] • Chalcogenide glasses (Sn x Ge 3 S 6 Ag 1-x (SGSA)) were prepared in bulk and thin film forms. • With increasing Sn amounts, the photoelectric current (I ph) was shifted to higher energies, i.e., absorption edge blueshift. • The photoconductivity (σ ph) is greater than dark conductivity (σ d) for all films under study. • The E g values for GSAS films lie within the light-visible range, making them suitable for enhancing light absorption in solar cell technologies. The physical characteristics of Sn-based quaternary glasses are the primary focus of this study. Chalcogenide glasses Sn x Ge 3 S 6 Ag 1-x (SGSA) were prepared using the common melting quench technique. The density (ρ) and compactness (Gc) of the glasses were found to decrease as the concentration of Sn rose, whereas the main atomic volume (V m) increased. With increasing Sn amounts, the photoelectric current (I ph) was shifted to higher energies (absorption edge blueshift). This leads to an increase in the values of the optical band gap (E g) and the activation energies (E d for electrical conduction in the dark and E ph for photoelectric). The values of the pre-exponential factor σ 0 d suggest that the conduction in the present films is mostly via the extended states. The photoconductivity (σ ph) is greater than dark conductivity (σ d) for all the glasses under study, but the first sample (0.0 at.% Sn content) has the highest photosensitivity. The E g values were correlated with main bond energy, cohesive energy, and average heats of atomization (H s). Also, with the addition of Sn content, the glass ionicity increases while the covalency decreases, making the glasses suitable for different optoelectronic devices. Furthermore, the E g values for SGSA films lie within the light visible range, making these glasses suitable for enhancing light absorption in solar cell technologies. [ABSTRACT FROM AUTHOR] |
| Copyright of Inorganic Chemistry Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 186500223 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Characterization of new quaternary SnxGe3S6Ag1−x ([formula omitted]) chalcogenide glasses for photovoltaic applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Mohamed%2C+Mansour%22">Mohamed, Mansour</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mansour.m@uoh.edu.sa</i><br /><searchLink fieldCode="AR" term="%22Al-Rasheedi%2C+Asmaa%22">Al-Rasheedi, Asmaa</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bouzidi%2C+M%2E%22">Bouzidi, M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Khan%2C+Z%2ER%2E%22">Khan, Z.R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Aly%2C+K%2EA%2E%22">Aly, K.A.</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<i> kaali5@uj.edu.sa</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Inorganic+Chemistry+Communications%22">Inorganic Chemistry Communications</searchLink>. Sep2025:Part 1, Vol. 179, pN.PAG-N.PAG. 1p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Photocurrents%22">Photocurrents</searchLink><br /><searchLink fieldCode="DE" term="%22Chalcogenide+glass%22">Chalcogenide glass</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronic+devices%22">Optoelectronic devices</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+technology%22">Solar technology</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: [Display omitted] • Chalcogenide glasses (Sn x Ge 3 S 6 Ag 1-x (SGSA)) were prepared in bulk and thin film forms. • With increasing Sn amounts, the photoelectric current (I ph) was shifted to higher energies, i.e., absorption edge blueshift. • The photoconductivity (σ ph) is greater than dark conductivity (σ d) for all films under study. • The E g values for GSAS films lie within the light-visible range, making them suitable for enhancing light absorption in solar cell technologies. The physical characteristics of Sn-based quaternary glasses are the primary focus of this study. Chalcogenide glasses Sn x Ge 3 S 6 Ag 1-x (SGSA) were prepared using the common melting quench technique. The density (ρ) and compactness (Gc) of the glasses were found to decrease as the concentration of Sn rose, whereas the main atomic volume (V m) increased. With increasing Sn amounts, the photoelectric current (I ph) was shifted to higher energies (absorption edge blueshift). This leads to an increase in the values of the optical band gap (E g) and the activation energies (E d for electrical conduction in the dark and E ph for photoelectric). The values of the pre-exponential factor σ 0 d suggest that the conduction in the present films is mostly via the extended states. The photoconductivity (σ ph) is greater than dark conductivity (σ d) for all the glasses under study, but the first sample (0.0 at.% Sn content) has the highest photosensitivity. The E g values were correlated with main bond energy, cohesive energy, and average heats of atomization (H s). Also, with the addition of Sn content, the glass ionicity increases while the covalency decreases, making the glasses suitable for different optoelectronic devices. Furthermore, the E g values for SGSA films lie within the light visible range, making these glasses suitable for enhancing light absorption in solar cell technologies. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Inorganic Chemistry Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.inoche.2025.114731 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: N.PAG Subjects: – SubjectFull: Photocurrents Type: general – SubjectFull: Chalcogenide glass Type: general – SubjectFull: Optoelectronic devices Type: general – SubjectFull: Solar technology Type: general – SubjectFull: Solar cells Type: general Titles: – TitleFull: Characterization of new quaternary SnxGe3S6Ag1−x ([formula omitted]) chalcogenide glasses for photovoltaic applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Mohamed, Mansour – PersonEntity: Name: NameFull: Al-Rasheedi, Asmaa – PersonEntity: Name: NameFull: Bouzidi, M. – PersonEntity: Name: NameFull: Khan, Z.R. – PersonEntity: Name: NameFull: Aly, K.A. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: Sep2025:Part 1 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 13877003 Numbering: – Type: volume Value: 179 Titles: – TitleFull: Inorganic Chemistry Communications Type: main |
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