Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO 3 Layers.
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| Title: | Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO 3 Layers. |
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| Authors: | Liu, Kai1 (AUTHOR), Jiang, Wengui1,2 (AUTHOR), Zhou, Liang1 (AUTHOR), Zhou, Yinkang1,2 (AUTHOR), Hu, Minghui1 (AUTHOR), Geng, Yuchen1 (AUTHOR), Zhang, Yiyuan1 (AUTHOR), Qiao, Yi2 (AUTHOR), Wang, Rongming1,2 (AUTHOR) rmwang@ustb.edu.cn, Sun, Yinghui1 (AUTHOR) yhsun@ustb.edu.cn |
| Source: | Nanomaterials (2079-4991). Jul2025, Vol. 15 Issue 13, p1033. 16p. |
| Subjects: | Two-dimensional materials (Nanotechnology), Nonvolatile random-access memory, Neuromorphics, Heterostructures, Applied sciences |
| Abstract: | Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO3-Ag RRAM device featuring 2D α-MoO3 as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>106), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO3-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>104 s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO3-Ag RRAM device featuring 2D α-MoO3 as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>106), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO3-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>104 s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15131033 |
