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Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO 3 Layers.

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Title: Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO 3 Layers.
Authors: Liu, Kai1 (AUTHOR), Jiang, Wengui1,2 (AUTHOR), Zhou, Liang1 (AUTHOR), Zhou, Yinkang1,2 (AUTHOR), Hu, Minghui1 (AUTHOR), Geng, Yuchen1 (AUTHOR), Zhang, Yiyuan1 (AUTHOR), Qiao, Yi2 (AUTHOR), Wang, Rongming1,2 (AUTHOR) rmwang@ustb.edu.cn, Sun, Yinghui1 (AUTHOR) yhsun@ustb.edu.cn
Source: Nanomaterials (2079-4991). Jul2025, Vol. 15 Issue 13, p1033. 16p.
Subjects: Two-dimensional materials (Nanotechnology), Nonvolatile random-access memory, Neuromorphics, Heterostructures, Applied sciences
Abstract: Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO3-Ag RRAM device featuring 2D α-MoO3 as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>106), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO3-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>104 s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO 3 Layers.
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  Data: <searchLink fieldCode="AR" term="%22Liu%2C+Kai%22">Liu, Kai</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiang%2C+Wengui%22">Jiang, Wengui</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Liang%22">Zhou, Liang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Yinkang%22">Zhou, Yinkang</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hu%2C+Minghui%22">Hu, Minghui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Geng%2C+Yuchen%22">Geng, Yuchen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Yiyuan%22">Zhang, Yiyuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Qiao%2C+Yi%22">Qiao, Yi</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Rongming%22">Wang, Rongming</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> rmwang@ustb.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Sun%2C+Yinghui%22">Sun, Yinghui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> yhsun@ustb.edu.cn</i>
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  Data: Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO3-Ag RRAM device featuring 2D α-MoO3 as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>106), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO3-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>104 s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – TitleFull: Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO 3 Layers.
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              Text: Jul2025
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