Effect of Hetero-Dielectric Gate on Direct Current, Radio Frequency/Analog, and Linearity Performance of Dual-Source Vertical Tunnel Field Effect Transistor for Low-Power Applications.
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| Title: | Effect of Hetero-Dielectric Gate on Direct Current, Radio Frequency/Analog, and Linearity Performance of Dual-Source Vertical Tunnel Field Effect Transistor for Low-Power Applications. |
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| Authors: | Singh, Sheetal1 (AUTHOR) sheetalsinghaug29@gmail.com, Wairya, Subodh1 (AUTHOR) |
| Source: | Semiconductors. Jul2025, Vol. 59 Issue 7, p650-660. 11p. |
| Subjects: | Field-effect transistors, Intermodulation distortion, Stray currents, Radio frequency, Dielectrics |
| Abstract: | The novel hetero-dielectric gate dual-source vertical tunnel field effect transistor architecture (HDG-DS-VTFET) is investigated in this paper along with an analysis of its DC, RF/Analog, noise, and linearity characteristics. This device features a vertically stacked gate oxide structure of HfO2/SiO2 in a dual-source vertical TFET configuration that reflects enhanced ION and better leakage current suppression compared to High-k-dielectric (HfO2)-DS-VTFET. Additionally, in comparison to HfO2-DS-VTFET, the HDG-DS-VTFET showed a reduced threshold voltage () of 0.21 V, a lower sub-threshold value of 8.5 mV/decade, and a higher ION/IOFF reflected as 7.1 × 1012. The present work used a calibrated SILVACO technology computer-aided design (TCAD) simulator. The proposed device has been thoroughly examined concerning its RF/Analog performance parameters, such as gate capacitances, gain-bandwidth product (GBP), cut-off frequency (), early voltage, intrinsic gain, and compared to a high-k dielectric (HfO2) DS-VTFET structure. Furthermore, a linearity analysis was performed as a figure of merit (FOM), considering several parameters such as the 1-db compression point, the 3rd-order intermodulation intercept point (IIP3), the 3rd-order voltage intercepts point (VIP3), and the 3rd-order intermodulation distortion point (IMD3). In comparison to the high-k dielectric (HfO2) DS-VTFET, the proposed HDG-DS-VTFET showed a significantly reduced sub threshold value of approximately 77% which gives a notably high ON current with low () for possible low-power linear and RF applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 186622037 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Effect of Hetero-Dielectric Gate on Direct Current, Radio Frequency/Analog, and Linearity Performance of Dual-Source Vertical Tunnel Field Effect Transistor for Low-Power Applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Singh%2C+Sheetal%22">Singh, Sheetal</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> sheetalsinghaug29@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Wairya%2C+Subodh%22">Wairya, Subodh</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Jul2025, Vol. 59 Issue 7, p650-660. 11p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Intermodulation+distortion%22">Intermodulation distortion</searchLink><br /><searchLink fieldCode="DE" term="%22Stray+currents%22">Stray currents</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+frequency%22">Radio frequency</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics%22">Dielectrics</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The novel hetero-dielectric gate dual-source vertical tunnel field effect transistor architecture (HDG-DS-VTFET) is investigated in this paper along with an analysis of its DC, RF/Analog, noise, and linearity characteristics. This device features a vertically stacked gate oxide structure of HfO2/SiO2 in a dual-source vertical TFET configuration that reflects enhanced ION and better leakage current suppression compared to High-k-dielectric (HfO2)-DS-VTFET. Additionally, in comparison to HfO2-DS-VTFET, the HDG-DS-VTFET showed a reduced threshold voltage () of 0.21 V, a lower sub-threshold value of 8.5 mV/decade, and a higher ION/IOFF reflected as 7.1 × 1012. The present work used a calibrated SILVACO technology computer-aided design (TCAD) simulator. The proposed device has been thoroughly examined concerning its RF/Analog performance parameters, such as gate capacitances, gain-bandwidth product (GBP), cut-off frequency (), early voltage, intrinsic gain, and compared to a high-k dielectric (HfO2) DS-VTFET structure. Furthermore, a linearity analysis was performed as a figure of merit (FOM), considering several parameters such as the 1-db compression point, the 3rd-order intermodulation intercept point (IIP3), the 3rd-order voltage intercepts point (VIP3), and the 3rd-order intermodulation distortion point (IMD3). In comparison to the high-k dielectric (HfO2) DS-VTFET, the proposed HDG-DS-VTFET showed a significantly reduced sub threshold value of approximately 77% which gives a notably high ON current with low () for possible low-power linear and RF applications. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S1063782625600664 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 650 Subjects: – SubjectFull: Field-effect transistors Type: general – SubjectFull: Intermodulation distortion Type: general – SubjectFull: Stray currents Type: general – SubjectFull: Radio frequency Type: general – SubjectFull: Dielectrics Type: general Titles: – TitleFull: Effect of Hetero-Dielectric Gate on Direct Current, Radio Frequency/Analog, and Linearity Performance of Dual-Source Vertical Tunnel Field Effect Transistor for Low-Power Applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Singh, Sheetal – PersonEntity: Name: NameFull: Wairya, Subodh IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 10637826 Numbering: – Type: volume Value: 59 – Type: issue Value: 7 Titles: – TitleFull: Semiconductors Type: main |
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