Performance Optimization of Channel Length Modulated Vertical Nanowire Tunnel Field Effect Transistors for High Frequency and Radio Frequency Applications.
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| Title: | Performance Optimization of Channel Length Modulated Vertical Nanowire Tunnel Field Effect Transistors for High Frequency and Radio Frequency Applications. |
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| Authors: | Bhardwaj, Anjana1 (AUTHOR), Das, Amit1,2 (AUTHOR) amitofficial7492@gmail.com, Gupta, Ashish3 (AUTHOR), Kumar, Dhirendra4 (AUTHOR), Yadav, Ranjeeta5 (AUTHOR) |
| Source: | Semiconductors. Jul2025, Vol. 59 Issue 7, p678-685. 8p. |
| Subjects: | Field-effect transistors, Shortwave radio, Tunnel field-effect transistors, Metalwork, Threshold voltage |
| Abstract: | In this work, the length of the channel for vertical nanowire tunnel FET is modulated for performance enhancement and the channel length modulated (CLM) vertical nanowire tunnel field effect transistor (VNW-TFET) is proposed. As the channel length modulation effects quantization, our goal is to reduce its impact on gate capacitance, which can change the device's performance. To determine the device's performance, other factors are taken into consideration, such as the device's threshold voltage (Vt), sub-threshold swing (SS), on-off current ratio (ION/IOFF), and drain induced barrier lowering (DIBL). It is discovered that the CLM-VNW-TFET performs better than the traditional VNW-TFET when the channel length is 20 nm. Later on, the gate metal work function (ϕMG) of the proposed device CLM-VNW-TFET is varied from 3.9 to 4.5eV and the impact of this variation is studied. The work-function variation effects of channel length modulated vertical nanowire tunnel FET are discussed for the first time. After investigation, it is found that the device CLM-VNW-TFET with ϕMG of 3.9 eV produces best ON-current (ION), OFF-current (IOFF) and other parameters. The device exhibits ION of 3.52 × 10–6 A/µm, IOFF of 7.30 × 10–17 A/µm and high ION/IOFF as 4.83 × 1010. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 186622040 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Performance Optimization of Channel Length Modulated Vertical Nanowire Tunnel Field Effect Transistors for High Frequency and Radio Frequency Applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Bhardwaj%2C+Anjana%22">Bhardwaj, Anjana</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Das%2C+Amit%22">Das, Amit</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> amitofficial7492@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Gupta%2C+Ashish%22">Gupta, Ashish</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kumar%2C+Dhirendra%22">Kumar, Dhirendra</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yadav%2C+Ranjeeta%22">Yadav, Ranjeeta</searchLink><relatesTo>5</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Jul2025, Vol. 59 Issue 7, p678-685. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Shortwave+radio%22">Shortwave radio</searchLink><br /><searchLink fieldCode="DE" term="%22Tunnel+field-effect+transistors%22">Tunnel field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Metalwork%22">Metalwork</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this work, the length of the channel for vertical nanowire tunnel FET is modulated for performance enhancement and the channel length modulated (CLM) vertical nanowire tunnel field effect transistor (VNW-TFET) is proposed. As the channel length modulation effects quantization, our goal is to reduce its impact on gate capacitance, which can change the device's performance. To determine the device's performance, other factors are taken into consideration, such as the device's threshold voltage (Vt), sub-threshold swing (SS), on-off current ratio (ION/IOFF), and drain induced barrier lowering (DIBL). It is discovered that the CLM-VNW-TFET performs better than the traditional VNW-TFET when the channel length is 20 nm. Later on, the gate metal work function (ϕMG) of the proposed device CLM-VNW-TFET is varied from 3.9 to 4.5eV and the impact of this variation is studied. The work-function variation effects of channel length modulated vertical nanowire tunnel FET are discussed for the first time. After investigation, it is found that the device CLM-VNW-TFET with ϕMG of 3.9 eV produces best ON-current (ION), OFF-current (IOFF) and other parameters. The device exhibits ION of 3.52 × 10–6 A/µm, IOFF of 7.30 × 10–17 A/µm and high ION/IOFF as 4.83 × 1010. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S1063782625601001 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 678 Subjects: – SubjectFull: Field-effect transistors Type: general – SubjectFull: Shortwave radio Type: general – SubjectFull: Tunnel field-effect transistors Type: general – SubjectFull: Metalwork Type: general – SubjectFull: Threshold voltage Type: general Titles: – TitleFull: Performance Optimization of Channel Length Modulated Vertical Nanowire Tunnel Field Effect Transistors for High Frequency and Radio Frequency Applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Bhardwaj, Anjana – PersonEntity: Name: NameFull: Das, Amit – PersonEntity: Name: NameFull: Gupta, Ashish – PersonEntity: Name: NameFull: Kumar, Dhirendra – PersonEntity: Name: NameFull: Yadav, Ranjeeta IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 10637826 Numbering: – Type: volume Value: 59 – Type: issue Value: 7 Titles: – TitleFull: Semiconductors Type: main |
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