Gain Enhanced Miller Compensated Operational Amplifier.
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| Title: | Gain Enhanced Miller Compensated Operational Amplifier. |
|---|---|
| Authors: | Duhan, Komal1 (AUTHOR) komal.phdece@pec.edu.in, Prakash, Dr. Neelam Rup1 (AUTHOR), Kaur, Dr. Jasbir1 (AUTHOR), Munjal, Sameeksha1 (AUTHOR) |
| Source: | Semiconductors. Jul2025, Vol. 59 Issue 7, p701-710. 10p. |
| Subjects: | Operational amplifiers, Field-effect transistors, Voltage references, Alternating currents, Metal oxide semiconductor field-effect transistors |
| Abstract: | The paper presents a gain-enhanced operational amplifier (Op-Amp) that offers both high bandwidth and phase margin. To enhance the phase margin, a Miller compensation technique incorporating a branch with a resistor and a capacitor connected in series has been employed. The cascoding of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) has been done to raise the output impedance, thus increasing the Op-Amp's gain. An Alternating Current (AC) analysis has been conducted to assess parameters such as unity-gain frequency, gain, Phase Margin (PM), and gain-bandwidth product. Utilizing an input voltage of 1.8 V and a 0.75 pF compensation capacitor, a gain of 104.1 dB and a PM of 73.78 degrees were achieved. This high-gain cascoded operational amplifier is suitable for applications in bandgap voltage references and filters. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 186622042 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Gain Enhanced Miller Compensated Operational Amplifier. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Duhan%2C+Komal%22">Duhan, Komal</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> komal.phdece@pec.edu.in</i><br /><searchLink fieldCode="AR" term="%22Prakash%2C+Dr%2E+Neelam+Rup%22">Prakash, Dr. Neelam Rup</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kaur%2C+Dr%2E+Jasbir%22">Kaur, Dr. Jasbir</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Munjal%2C+Sameeksha%22">Munjal, Sameeksha</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Jul2025, Vol. 59 Issue 7, p701-710. 10p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Operational+amplifiers%22">Operational amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Voltage+references%22">Voltage references</searchLink><br /><searchLink fieldCode="DE" term="%22Alternating+currents%22">Alternating currents</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The paper presents a gain-enhanced operational amplifier (Op-Amp) that offers both high bandwidth and phase margin. To enhance the phase margin, a Miller compensation technique incorporating a branch with a resistor and a capacitor connected in series has been employed. The cascoding of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) has been done to raise the output impedance, thus increasing the Op-Amp's gain. An Alternating Current (AC) analysis has been conducted to assess parameters such as unity-gain frequency, gain, Phase Margin (PM), and gain-bandwidth product. Utilizing an input voltage of 1.8 V and a 0.75 pF compensation capacitor, a gain of 104.1 dB and a PM of 73.78 degrees were achieved. This high-gain cascoded operational amplifier is suitable for applications in bandgap voltage references and filters. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S1063782625601542 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 701 Subjects: – SubjectFull: Operational amplifiers Type: general – SubjectFull: Field-effect transistors Type: general – SubjectFull: Voltage references Type: general – SubjectFull: Alternating currents Type: general – SubjectFull: Metal oxide semiconductor field-effect transistors Type: general Titles: – TitleFull: Gain Enhanced Miller Compensated Operational Amplifier. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Duhan, Komal – PersonEntity: Name: NameFull: Prakash, Dr. Neelam Rup – PersonEntity: Name: NameFull: Kaur, Dr. Jasbir – PersonEntity: Name: NameFull: Munjal, Sameeksha IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 10637826 Numbering: – Type: volume Value: 59 – Type: issue Value: 7 Titles: – TitleFull: Semiconductors Type: main |
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