Unraveling electrical transport and dielectric relaxation in P2-Type NaMg0.25Mn0.75O2: A promising layered oxide for high-temperature electronics.
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| Title: | Unraveling electrical transport and dielectric relaxation in P2-Type NaMg0.25Mn0.75O2: A promising layered oxide for high-temperature electronics. |
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| Authors: | Karmakar, S.1 (AUTHOR) skarmakarph@gmail.com, Sahoo, S.2 (AUTHOR), Mohanty, H.S.3 (AUTHOR), Boddhula, R.4 (AUTHOR), Reddy, G Naaresh4 (AUTHOR), Mohapatra, S.R.5 (AUTHOR), Mahato, K.K.6 (AUTHOR), Anirban, Sk7 (AUTHOR), Nayak, P.8 (AUTHOR), Kumar, G.R.1 (AUTHOR), Deka, N.9 (AUTHOR) |
| Source: | Ceramics International. Sep2025:Part A, Vol. 51 Issue 21, p32958-32966. 9p. |
| Subjects: | High temperature electronics, Potential energy, Hopping conduction, Sol-gel materials, Charge carriers |
| Abstract: | This present work introduces a strategically engineered P2- type NaMg 0.25 Mn 0.75 O 2 (NNMO) cathode material by sol-gel auto-combustion techniques with optimized cation substitution (Mg2+ for Mn4+), which enhances structural stability and high-temperature electrical performance. The X-ray diffraction (XRD) pattern and Raman spectra reveal the P2- type hexagonal crystal structure (space group P6 3 /mmc) and three sharp Raman active phonon modes A 1g , E 2g , and E 1g at 595, 480, and 390 cm−1, respectively. The ac electrical transport properties i.e., impedance, conductivity, dielectric, and modulus spectra of NaMg 0.25 Mn 0.75 O 2 investigated at different temperatures from 298 to 523 K (ΔT = 50 K) and frequency range between 100 Hz and 1 MHz. It has been discovered from impedance and conductivity that the NMMO pellet sample contains short-range (AC) and long-range (DC) charge carrier movements, with the former predominating at low temperatures and the latter at high temperatures. The variation of frequency exponent (n) decreases with temperatures which reveals the correlated barrier hopping (CBH) conduction process where the charge carriers (electrons or holes) hop between localized states over a potential energy barrier. The dc activation energy (E a) was calculated at ∼0.48 eV using Arrhenius plots. High dielectric constant (ε r)∼5.4 × 106 and low loss (δ)∼23 were obtained at high temperature (523 K) and low frequency (50 Hz) region which recommends its high energy storage capacity at room and high temperatures. The thermal robustness, stable dielectric response, and favorable ac electrical conduction of NMMO demonstrated its possible technological application as a capacitor in high-temperature power electronics and next generation energy storages applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 186994794 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Unraveling electrical transport and dielectric relaxation in P2-Type NaMg0.25Mn0.75O2: A promising layered oxide for high-temperature electronics. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Karmakar%2C+S%2E%22">Karmakar, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> skarmakarph@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Sahoo%2C+S%2E%22">Sahoo, S.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mohanty%2C+H%2ES%2E%22">Mohanty, H.S.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Boddhula%2C+R%2E%22">Boddhula, R.</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Reddy%2C+G+Naaresh%22">Reddy, G Naaresh</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mohapatra%2C+S%2ER%2E%22">Mohapatra, S.R.</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mahato%2C+K%2EK%2E%22">Mahato, K.K.</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Anirban%2C+Sk%22">Anirban, Sk</searchLink><relatesTo>7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Nayak%2C+P%2E%22">Nayak, P.</searchLink><relatesTo>8</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kumar%2C+G%2ER%2E%22">Kumar, G.R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Deka%2C+N%2E%22">Deka, N.</searchLink><relatesTo>9</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. Sep2025:Part A, Vol. 51 Issue 21, p32958-32966. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22High+temperature+electronics%22">High temperature electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Potential+energy%22">Potential energy</searchLink><br /><searchLink fieldCode="DE" term="%22Hopping+conduction%22">Hopping conduction</searchLink><br /><searchLink fieldCode="DE" term="%22Sol-gel+materials%22">Sol-gel materials</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carriers%22">Charge carriers</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This present work introduces a strategically engineered P2- type NaMg 0.25 Mn 0.75 O 2 (NNMO) cathode material by sol-gel auto-combustion techniques with optimized cation substitution (Mg2+ for Mn4+), which enhances structural stability and high-temperature electrical performance. The X-ray diffraction (XRD) pattern and Raman spectra reveal the P2- type hexagonal crystal structure (space group P6 3 /mmc) and three sharp Raman active phonon modes A 1g , E 2g , and E 1g at 595, 480, and 390 cm−1, respectively. The ac electrical transport properties i.e., impedance, conductivity, dielectric, and modulus spectra of NaMg 0.25 Mn 0.75 O 2 investigated at different temperatures from 298 to 523 K (ΔT = 50 K) and frequency range between 100 Hz and 1 MHz. It has been discovered from impedance and conductivity that the NMMO pellet sample contains short-range (AC) and long-range (DC) charge carrier movements, with the former predominating at low temperatures and the latter at high temperatures. The variation of frequency exponent (n) decreases with temperatures which reveals the correlated barrier hopping (CBH) conduction process where the charge carriers (electrons or holes) hop between localized states over a potential energy barrier. The dc activation energy (E a) was calculated at ∼0.48 eV using Arrhenius plots. High dielectric constant (ε r)∼5.4 × 106 and low loss (δ)∼23 were obtained at high temperature (523 K) and low frequency (50 Hz) region which recommends its high energy storage capacity at room and high temperatures. The thermal robustness, stable dielectric response, and favorable ac electrical conduction of NMMO demonstrated its possible technological application as a capacitor in high-temperature power electronics and next generation energy storages applications. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.ceramint.2025.05.030 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 32958 Subjects: – SubjectFull: High temperature electronics Type: general – SubjectFull: Potential energy Type: general – SubjectFull: Hopping conduction Type: general – SubjectFull: Sol-gel materials Type: general – SubjectFull: Charge carriers Type: general Titles: – TitleFull: Unraveling electrical transport and dielectric relaxation in P2-Type NaMg0.25Mn0.75O2: A promising layered oxide for high-temperature electronics. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Karmakar, S. – PersonEntity: Name: NameFull: Sahoo, S. – PersonEntity: Name: NameFull: Mohanty, H.S. – PersonEntity: Name: NameFull: Boddhula, R. – PersonEntity: Name: NameFull: Reddy, G Naaresh – PersonEntity: Name: NameFull: Mohapatra, S.R. – PersonEntity: Name: NameFull: Mahato, K.K. – PersonEntity: Name: NameFull: Anirban, Sk – PersonEntity: Name: NameFull: Nayak, P. – PersonEntity: Name: NameFull: Kumar, G.R. – PersonEntity: Name: NameFull: Deka, N. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: Sep2025:Part A Type: published Y: 2025 Identifiers: – Type: issn-print Value: 02728842 Numbering: – Type: volume Value: 51 – Type: issue Value: 21 Titles: – TitleFull: Ceramics International Type: main |
| ResultId | 1 |
