APA (7th ed.) Citation

Mihai, C., Simandan, I., Sava, F., Tite, T., Bocirnea, A., Vaduva, M., . . . Velea, A. (2025). Fabrication of High-Quality MoS 2 /Graphene Lateral Heterostructure Memristors. Nanomaterials (2079-4991), 15(16), 1239. https://doi.org/10.3390/nano15161239

Chicago Style (17th ed.) Citation

Mihai, Claudia, Iosif-Daniel Simandan, Florinel Sava, Teddy Tite, Amelia Bocirnea, Mirela Vaduva, Mohamed Yassine Zaki, Mihaela Baibarac, and Alin Velea. "Fabrication of High-Quality MoS 2 /Graphene Lateral Heterostructure Memristors." Nanomaterials (2079-4991) 15, no. 16 (2025): 1239. https://doi.org/10.3390/nano15161239.

MLA (9th ed.) Citation

Mihai, Claudia, et al. "Fabrication of High-Quality MoS 2 /Graphene Lateral Heterostructure Memristors." Nanomaterials (2079-4991), vol. 15, no. 16, 2025, p. 1239, https://doi.org/10.3390/nano15161239.