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Fabrication of High-Quality MoS 2 /Graphene Lateral Heterostructure Memristors.

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Title: Fabrication of High-Quality MoS 2 /Graphene Lateral Heterostructure Memristors.
Authors: Mihai, Claudia1 (AUTHOR), Simandan, Iosif-Daniel1 (AUTHOR), Sava, Florinel1 (AUTHOR), Tite, Teddy1 (AUTHOR), Bocirnea, Amelia1 (AUTHOR), Vaduva, Mirela1 (AUTHOR), Zaki, Mohamed Yassine1 (AUTHOR), Baibarac, Mihaela1 (AUTHOR), Velea, Alin (AUTHOR) alin.velea@infim.ro
Source: Nanomaterials (2079-4991). Aug2025, Vol. 15 Issue 16, p1239. 16p.
Subjects: Molybdenum disulfide, Graphene, Sputtering (Physics), Heterostructures, Sulfuration, Memristors, Complementary metal oxide semiconductors
Abstract: Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal–oxide–semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS2 precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS2 (roughness: 0.8–0.9 nm) over 1.5 cm × 2 cm coupons. Lateral MoS2/graphene devices exhibit reproducible non-volatile resistive switching with a set transition (SET) near +6 V and an analogue ON/OFF ≈2.1, attributable to vacancy-induced Schottky-barrier modulation. The single-furnace magnetron sputtering + sulfurization sequence avoids toxic H2S, polymer transfer steps, and high-resistance contacts, offering a cost-effective pathway toward wafer-scale 2D memristors compatible with back-end CMOS temperatures. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: Fabrication of High-Quality MoS 2 /Graphene Lateral Heterostructure Memristors.
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  Data: <searchLink fieldCode="AR" term="%22Mihai%2C+Claudia%22">Mihai, Claudia</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Simandan%2C+Iosif-Daniel%22">Simandan, Iosif-Daniel</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sava%2C+Florinel%22">Sava, Florinel</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tite%2C+Teddy%22">Tite, Teddy</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bocirnea%2C+Amelia%22">Bocirnea, Amelia</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Vaduva%2C+Mirela%22">Vaduva, Mirela</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zaki%2C+Mohamed+Yassine%22">Zaki, Mohamed Yassine</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Baibarac%2C+Mihaela%22">Baibarac, Mihaela</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Velea%2C+Alin%22">Velea, Alin</searchLink> (AUTHOR)<i> alin.velea@infim.ro</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Aug2025, Vol. 15 Issue 16, p1239. 16p.
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  Data: <searchLink fieldCode="DE" term="%22Molybdenum+disulfide%22">Molybdenum disulfide</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Sputtering+%28Physics%29%22">Sputtering (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Sulfuration%22">Sulfuration</searchLink><br /><searchLink fieldCode="DE" term="%22Memristors%22">Memristors</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal–oxide–semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS2 precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS2 (roughness: 0.8–0.9 nm) over 1.5 cm × 2 cm coupons. Lateral MoS2/graphene devices exhibit reproducible non-volatile resistive switching with a set transition (SET) near +6 V and an analogue ON/OFF ≈2.1, attributable to vacancy-induced Schottky-barrier modulation. The single-furnace magnetron sputtering + sulfurization sequence avoids toxic H2S, polymer transfer steps, and high-resistance contacts, offering a cost-effective pathway toward wafer-scale 2D memristors compatible with back-end CMOS temperatures. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano15161239
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      – Code: eng
        Text: English
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        PageCount: 16
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      – SubjectFull: Molybdenum disulfide
        Type: general
      – SubjectFull: Graphene
        Type: general
      – SubjectFull: Sputtering (Physics)
        Type: general
      – SubjectFull: Heterostructures
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      – SubjectFull: Sulfuration
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      – SubjectFull: Memristors
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
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      – TitleFull: Fabrication of High-Quality MoS 2 /Graphene Lateral Heterostructure Memristors.
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              M: 08
              Text: Aug2025
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