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Enhancement of Cu-Cu Bonding Interfaces Through High Creep Rate in Nanocrystalline Cu.

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Title: Enhancement of Cu-Cu Bonding Interfaces Through High Creep Rate in Nanocrystalline Cu.
Authors: Huang, Jian-Yuan1 (AUTHOR), Tran, Dinh-Phuc2 (AUTHOR), Lee, Kang-Ping2,3 (AUTHOR), Lin, Yi-Quan1,2 (AUTHOR), Kuo, Emile2,3 (AUTHOR), Chen, Tsung-Chuan3 (AUTHOR), Chen, Yao-Tsung3 (AUTHOR), Chung, Stream3 (AUTHOR), Chen, Chih1,2 (AUTHOR) chihchen@nycu.edu.tw
Source: Materials (1996-1944). Aug2025, Vol. 18 Issue 16, p3725. 14p.
Subjects: Crystal grain boundaries, Microelectronic packaging, Kirkendall effect, Heat capacity, Metallic bonds
Abstract: This study investigates the use of nanocrystalline Cu (NC-Cu) to suppress interfacial voids in low-temperature Cu-Cu bonding for 3D IC packaging. We quantitatively compared the void characteristics of electrodeposited NC-Cu (grain size ~89.3 nm) and (111)-oriented nanotwinned Cu (NT-Cu, ~621.8 nm) bonded at 200 °C. Plan-view STEM-HAADF analysis revealed that NC-Cu achieved a much lower void area ratio (1.8%) than NT-Cu (4.0%), attributed to its high grain boundary density, which enhances atomic diffusion and grain boundary migration. At 250 °C, typical Ostwald ripening was observed, with fewer but larger voids. However, a rise in total void area fraction suggests a competing mechanism—possibly new void nucleation at grain boundaries triggered by residual defects from the electroplating process. These results highlight the superior void-mitigating capability of NC-Cu under low thermal budgets. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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An: 187614858
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  Data: Enhancement of Cu-Cu Bonding Interfaces Through High Creep Rate in Nanocrystalline Cu.
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  Data: <searchLink fieldCode="AR" term="%22Huang%2C+Jian-Yuan%22">Huang, Jian-Yuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tran%2C+Dinh-Phuc%22">Tran, Dinh-Phuc</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Kang-Ping%22">Lee, Kang-Ping</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lin%2C+Yi-Quan%22">Lin, Yi-Quan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kuo%2C+Emile%22">Kuo, Emile</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Tsung-Chuan%22">Chen, Tsung-Chuan</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Yao-Tsung%22">Chen, Yao-Tsung</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chung%2C+Stream%22">Chung, Stream</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Chih%22">Chen, Chih</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> chihchen@nycu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Aug2025, Vol. 18 Issue 16, p3725. 14p.
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  Data: <searchLink fieldCode="DE" term="%22Crystal+grain+boundaries%22">Crystal grain boundaries</searchLink><br /><searchLink fieldCode="DE" term="%22Microelectronic+packaging%22">Microelectronic packaging</searchLink><br /><searchLink fieldCode="DE" term="%22Kirkendall+effect%22">Kirkendall effect</searchLink><br /><searchLink fieldCode="DE" term="%22Heat+capacity%22">Heat capacity</searchLink><br /><searchLink fieldCode="DE" term="%22Metallic+bonds%22">Metallic bonds</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: This study investigates the use of nanocrystalline Cu (NC-Cu) to suppress interfacial voids in low-temperature Cu-Cu bonding for 3D IC packaging. We quantitatively compared the void characteristics of electrodeposited NC-Cu (grain size ~89.3 nm) and (111)-oriented nanotwinned Cu (NT-Cu, ~621.8 nm) bonded at 200 °C. Plan-view STEM-HAADF analysis revealed that NC-Cu achieved a much lower void area ratio (1.8%) than NT-Cu (4.0%), attributed to its high grain boundary density, which enhances atomic diffusion and grain boundary migration. At 250 °C, typical Ostwald ripening was observed, with fewer but larger voids. However, a rise in total void area fraction suggests a competing mechanism—possibly new void nucleation at grain boundaries triggered by residual defects from the electroplating process. These results highlight the superior void-mitigating capability of NC-Cu under low thermal budgets. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/ma18163725
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        Text: English
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        StartPage: 3725
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      – SubjectFull: Crystal grain boundaries
        Type: general
      – SubjectFull: Microelectronic packaging
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      – SubjectFull: Kirkendall effect
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      – SubjectFull: Heat capacity
        Type: general
      – SubjectFull: Metallic bonds
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    Titles:
      – TitleFull: Enhancement of Cu-Cu Bonding Interfaces Through High Creep Rate in Nanocrystalline Cu.
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              M: 08
              Text: Aug2025
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              Y: 2025
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