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Bilayer non-volatile RRAM with MgxNi1−xO conversion layer.

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Title: Bilayer non-volatile RRAM with MgxNi1−xO conversion layer.
Authors: Qiu, Qi-Rui1 (AUTHOR), Chang, Sheng-Po2 (AUTHOR) changsp@nkust.edu.tw, Liu, Tzu-Yuan1 (AUTHOR), Chen, Jone-Fang1 (AUTHOR), Chang, Shoou-Jinn1 (AUTHOR)
Source: Modern Physics Letters B. 12/20/2025, Vol. 39 Issue 35, p1-10. 10p.
Subjects: Nonvolatile random-access memory, Current-voltage characteristics, Durability, Nonvolatile memory, Transition metal oxides, Memristors, Electric conductivity
Abstract: This study aimed to enhance the performance of Resistive Random Access Memory (RRAM) cells with a switching layer of MgNiO. We investigated the MgxNi 1 − x O material and utilized it as the oxide layer in the RRAM structure. In the experiment, Ni was employed as the upper electrode, and the oxide layer was stacked in an attempt to improve the RRAM characteristics. The I–V characteristics were then analyzed to examine the switching behavior of the RRAM. After stacking Mg 0. 8 Ni 0. 2 O beneath Mg 0. 5 Ni 0. 5 O, a slight increase in the HRS/LRS order was observed, while the stability of the element showed significant improvement. The heterojunction memory exhibited the ability to switch between HRS/LRS states more than 2,500 times, as demonstrated in the I–V sweep. Moreover, no significant changes were observed in the I–V curve between the first and the 2,500th cycles. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:This study aimed to enhance the performance of Resistive Random Access Memory (RRAM) cells with a switching layer of MgNiO. We investigated the MgxNi 1 − x O material and utilized it as the oxide layer in the RRAM structure. In the experiment, Ni was employed as the upper electrode, and the oxide layer was stacked in an attempt to improve the RRAM characteristics. The I–V characteristics were then analyzed to examine the switching behavior of the RRAM. After stacking Mg 0. 8 Ni 0. 2 O beneath Mg 0. 5 Ni 0. 5 O, a slight increase in the HRS/LRS order was observed, while the stability of the element showed significant improvement. The heterojunction memory exhibited the ability to switch between HRS/LRS states more than 2,500 times, as demonstrated in the I–V sweep. Moreover, no significant changes were observed in the I–V curve between the first and the 2,500th cycles. [ABSTRACT FROM AUTHOR]
ISSN:02179849
DOI:10.1142/S0217984925502355