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Bilayer non-volatile RRAM with MgxNi1−xO conversion layer.

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Title: Bilayer non-volatile RRAM with MgxNi1−xO conversion layer.
Authors: Qiu, Qi-Rui1 (AUTHOR), Chang, Sheng-Po2 (AUTHOR) changsp@nkust.edu.tw, Liu, Tzu-Yuan1 (AUTHOR), Chen, Jone-Fang1 (AUTHOR), Chang, Shoou-Jinn1 (AUTHOR)
Source: Modern Physics Letters B. 12/20/2025, Vol. 39 Issue 35, p1-10. 10p.
Subjects: Nonvolatile random-access memory, Current-voltage characteristics, Durability, Nonvolatile memory, Transition metal oxides, Memristors, Electric conductivity
Abstract: This study aimed to enhance the performance of Resistive Random Access Memory (RRAM) cells with a switching layer of MgNiO. We investigated the MgxNi 1 − x O material and utilized it as the oxide layer in the RRAM structure. In the experiment, Ni was employed as the upper electrode, and the oxide layer was stacked in an attempt to improve the RRAM characteristics. The I–V characteristics were then analyzed to examine the switching behavior of the RRAM. After stacking Mg 0. 8 Ni 0. 2 O beneath Mg 0. 5 Ni 0. 5 O, a slight increase in the HRS/LRS order was observed, while the stability of the element showed significant improvement. The heterojunction memory exhibited the ability to switch between HRS/LRS states more than 2,500 times, as demonstrated in the I–V sweep. Moreover, no significant changes were observed in the I–V curve between the first and the 2,500th cycles. [ABSTRACT FROM AUTHOR]
Copyright of Modern Physics Letters B is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 187786360
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PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Bilayer non-volatile RRAM with Mg<subscript>x</subscript>Ni1−xO conversion layer.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Qiu%2C+Qi-Rui%22">Qiu, Qi-Rui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chang%2C+Sheng-Po%22">Chang, Sheng-Po</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> changsp@nkust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Liu%2C+Tzu-Yuan%22">Liu, Tzu-Yuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Jone-Fang%22">Chen, Jone-Fang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chang%2C+Shoou-Jinn%22">Chang, Shoou-Jinn</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Modern+Physics+Letters+B%22">Modern Physics Letters B</searchLink>. 12/20/2025, Vol. 39 Issue 35, p1-10. 10p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Nonvolatile+random-access+memory%22">Nonvolatile random-access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Current-voltage+characteristics%22">Current-voltage characteristics</searchLink><br /><searchLink fieldCode="DE" term="%22Durability%22">Durability</searchLink><br /><searchLink fieldCode="DE" term="%22Nonvolatile+memory%22">Nonvolatile memory</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+metal+oxides%22">Transition metal oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Memristors%22">Memristors</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This study aimed to enhance the performance of Resistive Random Access Memory (RRAM) cells with a switching layer of MgNiO. We investigated the MgxNi 1 − x O material and utilized it as the oxide layer in the RRAM structure. In the experiment, Ni was employed as the upper electrode, and the oxide layer was stacked in an attempt to improve the RRAM characteristics. The I–V characteristics were then analyzed to examine the switching behavior of the RRAM. After stacking Mg 0. 8 Ni 0. 2 O beneath Mg 0. 5 Ni 0. 5 O, a slight increase in the HRS/LRS order was observed, while the stability of the element showed significant improvement. The heterojunction memory exhibited the ability to switch between HRS/LRS states more than 2,500 times, as demonstrated in the I–V sweep. Moreover, no significant changes were observed in the I–V curve between the first and the 2,500th cycles. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Modern Physics Letters B is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1142/S0217984925502355
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 1
    Subjects:
      – SubjectFull: Nonvolatile random-access memory
        Type: general
      – SubjectFull: Current-voltage characteristics
        Type: general
      – SubjectFull: Durability
        Type: general
      – SubjectFull: Nonvolatile memory
        Type: general
      – SubjectFull: Transition metal oxides
        Type: general
      – SubjectFull: Memristors
        Type: general
      – SubjectFull: Electric conductivity
        Type: general
    Titles:
      – TitleFull: Bilayer non-volatile RRAM with MgxNi1−xO conversion layer.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Qiu, Qi-Rui
      – PersonEntity:
          Name:
            NameFull: Chang, Sheng-Po
      – PersonEntity:
          Name:
            NameFull: Liu, Tzu-Yuan
      – PersonEntity:
          Name:
            NameFull: Chen, Jone-Fang
      – PersonEntity:
          Name:
            NameFull: Chang, Shoou-Jinn
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 20
              M: 12
              Text: 12/20/2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 02179849
          Numbering:
            – Type: volume
              Value: 39
            – Type: issue
              Value: 35
          Titles:
            – TitleFull: Modern Physics Letters B
              Type: main
ResultId 1