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Thin dielectric to dielectric hydrophilic wafer bonding for FD-SOI and C-FET manufacturing.

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Title: Thin dielectric to dielectric hydrophilic wafer bonding for FD-SOI and C-FET manufacturing.
Authors: Noel, P.1 (AUTHOR) paul.noel@cea.fr, Larrey, V.1 (AUTHOR), Tardif, S.2 (AUTHOR), Rieutord, F.3 (AUTHOR), Landru, D.3 (AUTHOR), Fournel, F.1 (AUTHOR)
Source: Solid-State Electronics. Nov2025, Vol. 229, pN.PAG-N.PAG. 1p.
Subjects: Interfacial bonding, Dielectrics, Silicon-on-insulator technology, Semiconductor wafer bonding, Field-effect transistors, Nanoparticles
Abstract: • Direct bonding involving thin symmetrical dielectric layers may be used for silicon layer transfer for FD-SOI and C-FET technologies. • Scanning Acoustic Microscopy characterization of bonded wafers within thin symmetric dielectric layer. • Hard X-Ray Reflectometry @ ESRF characterization of bonding interface and formation of interfacial nanoclusters is evidenced. • Bonding interface toughness for high transfer quality has been assessed. Direct hydrophilic bonding of silicon structures with low dielectric thickness may lead to the generation of bonding voids during annealing. Yet, silicon layer transfer requires thinner dielectric layers for FD–SOI and C-FET advanced devices. The aim being high bond strengths and low bonding void densities for advanced technological nodes, we show the crucial impact of bonding layer properties on interface sealing and bonding energies. [ABSTRACT FROM AUTHOR]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 187841064
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
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  Data: Thin dielectric to dielectric hydrophilic wafer bonding for FD-SOI and C-FET manufacturing.
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  Data: <searchLink fieldCode="AR" term="%22Noel%2C+P%2E%22">Noel, P.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> paul.noel@cea.fr</i><br /><searchLink fieldCode="AR" term="%22Larrey%2C+V%2E%22">Larrey, V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tardif%2C+S%2E%22">Tardif, S.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Rieutord%2C+F%2E%22">Rieutord, F.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Landru%2C+D%2E%22">Landru, D.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fournel%2C+F%2E%22">Fournel, F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Nov2025, Vol. 229, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Interfacial+bonding%22">Interfacial bonding</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics%22">Dielectrics</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon-on-insulator+technology%22">Silicon-on-insulator technology</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+wafer+bonding%22">Semiconductor wafer bonding</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Nanoparticles%22">Nanoparticles</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: • Direct bonding involving thin symmetrical dielectric layers may be used for silicon layer transfer for FD-SOI and C-FET technologies. • Scanning Acoustic Microscopy characterization of bonded wafers within thin symmetric dielectric layer. • Hard X-Ray Reflectometry @ ESRF characterization of bonding interface and formation of interfacial nanoclusters is evidenced. • Bonding interface toughness for high transfer quality has been assessed. Direct hydrophilic bonding of silicon structures with low dielectric thickness may lead to the generation of bonding voids during annealing. Yet, silicon layer transfer requires thinner dielectric layers for FD–SOI and C-FET advanced devices. The aim being high bond strengths and low bonding void densities for advanced technological nodes, we show the crucial impact of bonding layer properties on interface sealing and bonding energies. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.sse.2025.109188
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Interfacial bonding
        Type: general
      – SubjectFull: Dielectrics
        Type: general
      – SubjectFull: Silicon-on-insulator technology
        Type: general
      – SubjectFull: Semiconductor wafer bonding
        Type: general
      – SubjectFull: Field-effect transistors
        Type: general
      – SubjectFull: Nanoparticles
        Type: general
    Titles:
      – TitleFull: Thin dielectric to dielectric hydrophilic wafer bonding for FD-SOI and C-FET manufacturing.
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            NameFull: Noel, P.
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            NameFull: Larrey, V.
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            NameFull: Landru, D.
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            – D: 01
              M: 11
              Text: Nov2025
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              Y: 2025
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              Value: 229
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