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Effect of oxygen content on p-type electrical conductivity in β-Ga2O3 films.

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Title: Effect of oxygen content on p-type electrical conductivity in β-Ga2O3 films.
Authors: Park, Se-Rim1,2 (AUTHOR), Chi, Zeyu1,2 (AUTHOR) zeyu.chi@uvsq.fr, Sartel, Corinne2 (AUTHOR), Koo, Sang-Mo1 (AUTHOR), Fregnaux, Mathieu3 (AUTHOR), Zheng, Yunlin4 (AUTHOR), Douglas, Sean5 (AUTHOR), Penman, Lewis5 (AUTHOR), Massabuau, Fabien5 (AUTHOR), Tchelidze, Tamar6 (AUTHOR), Chauveau, Jean-Michel1,2 (AUTHOR) jean-michel.chauveau@uvsq.fr, Chikoidze, Ekaterine1,2 (AUTHOR) ekaterine.chikoidze@uvsq.fr
Source: Materials Science in Semiconductor Processing. Dec2025, Vol. 200, pN.PAG-N.PAG. 1p.
Subjects: Atmospheric oxygen, Thin films, Gallium, Homoepitaxy, Crystallinity, Metal organic chemical vapor deposition, Hole mobility
Abstract: β-Ga 2 O 3 is a promising ultrawide bandgap semiconductor, but achieving reliable p- type conductivity remains a challenge, especially due to the scarcity of high-quality homoepitaxial p- type β -Ga 2 O 3 layers. In this study, we investigate β -Ga 2 O 3 thin films homoepitaxially grown on (2 ‾ 01) Fe doped β -Ga 2 O 3 substrates via metal organic chemical vapor deposition under different oxygen-to-gallium (O/Ga) ratios. We examine the effect of oxygen content on the structural, electrical, and optical properties of thin films. The layer grown under oxygen-rich conditions (O/Ga = 6400) exhibited an enhanced crystallinity of the dominant (2 ‾ 01) orientation as indicated by a low full-width at half maximum (FWHM) of 72 arcsec in the X-ray diffraction rocking curve, a suppressed oxygen vacancy signal in X-ray photoelectron spectroscopy, and a two order of magnitude increase in hole concentration (p = 4.5 × 1015 cm−3 vs. 4.6 × 1013 cm−3 at 570 K), associated with a shallow acceptor level with an activation energy of 0.21 eV, likely due to V G a − - V O + + complex-like defect. In addition, both films exhibit hole mobility μ H > 30 cm2/V·s over the measurement temperature range. These findings suggest that oxygen-rich growth conditions enhance both the crystallinity and native hole conductivity of β -Ga 2 O 3 , offering a promising route toward achieving controlled p- type behavior in this material. [ABSTRACT FROM AUTHOR]
Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 187969459
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  Data: Effect of oxygen content on p-type electrical conductivity in β-Ga2O3 films.
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  Data: <searchLink fieldCode="AR" term="%22Park%2C+Se-Rim%22">Park, Se-Rim</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chi%2C+Zeyu%22">Chi, Zeyu</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> zeyu.chi@uvsq.fr</i><br /><searchLink fieldCode="AR" term="%22Sartel%2C+Corinne%22">Sartel, Corinne</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Koo%2C+Sang-Mo%22">Koo, Sang-Mo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fregnaux%2C+Mathieu%22">Fregnaux, Mathieu</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zheng%2C+Yunlin%22">Zheng, Yunlin</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Douglas%2C+Sean%22">Douglas, Sean</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Penman%2C+Lewis%22">Penman, Lewis</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Massabuau%2C+Fabien%22">Massabuau, Fabien</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tchelidze%2C+Tamar%22">Tchelidze, Tamar</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chauveau%2C+Jean-Michel%22">Chauveau, Jean-Michel</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> jean-michel.chauveau@uvsq.fr</i><br /><searchLink fieldCode="AR" term="%22Chikoidze%2C+Ekaterine%22">Chikoidze, Ekaterine</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> ekaterine.chikoidze@uvsq.fr</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>. Dec2025, Vol. 200, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Atmospheric+oxygen%22">Atmospheric oxygen</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium%22">Gallium</searchLink><br /><searchLink fieldCode="DE" term="%22Homoepitaxy%22">Homoepitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallinity%22">Crystallinity</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+organic+chemical+vapor+deposition%22">Metal organic chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Hole+mobility%22">Hole mobility</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: β-Ga 2 O 3 is a promising ultrawide bandgap semiconductor, but achieving reliable p- type conductivity remains a challenge, especially due to the scarcity of high-quality homoepitaxial p- type β -Ga 2 O 3 layers. In this study, we investigate β -Ga 2 O 3 thin films homoepitaxially grown on (2 ‾ 01) Fe doped β -Ga 2 O 3 substrates via metal organic chemical vapor deposition under different oxygen-to-gallium (O/Ga) ratios. We examine the effect of oxygen content on the structural, electrical, and optical properties of thin films. The layer grown under oxygen-rich conditions (O/Ga = 6400) exhibited an enhanced crystallinity of the dominant (2 ‾ 01) orientation as indicated by a low full-width at half maximum (FWHM) of 72 arcsec in the X-ray diffraction rocking curve, a suppressed oxygen vacancy signal in X-ray photoelectron spectroscopy, and a two order of magnitude increase in hole concentration (p = 4.5 × 1015 cm−3 vs. 4.6 × 1013 cm−3 at 570 K), associated with a shallow acceptor level with an activation energy of 0.21 eV, likely due to V G a − - V O + + complex-like defect. In addition, both films exhibit hole mobility μ H > 30 cm2/V·s over the measurement temperature range. These findings suggest that oxygen-rich growth conditions enhance both the crystallinity and native hole conductivity of β -Ga 2 O 3 , offering a promising route toward achieving controlled p- type behavior in this material. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.mssp.2025.110003
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Atmospheric oxygen
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Gallium
        Type: general
      – SubjectFull: Homoepitaxy
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      – SubjectFull: Crystallinity
        Type: general
      – SubjectFull: Metal organic chemical vapor deposition
        Type: general
      – SubjectFull: Hole mobility
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      – TitleFull: Effect of oxygen content on p-type electrical conductivity in β-Ga2O3 films.
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              M: 12
              Text: Dec2025
              Type: published
              Y: 2025
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